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Method of depositing metals using high frequency plasma

  • US 9,466,524 B2
  • Filed: 01/16/2013
  • Issued: 10/11/2016
  • Est. Priority Date: 01/31/2012
  • Status: Active Grant
First Claim
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1. A method of depositing a tantalum nitride film on a surface of a substrate, the method comprising:

  • placing the substrate in a processing chamber comprising a gas distribution plate, the gas distribution plate comprising at least one first reactive gas injector and at least one second reactive gas injector, the at least one first reactive gas injector providing a tantalum precursor and the at least one second reactive gas injector providing a high frequency plasma, the at least one first reactive gas injector being separated from the at least one second reactive gas injector by one or more vacuum ports and one or more purge gas injectors; and

    passing a portion of the substrate across the gas distribution plate in a first direction so that the portion of the substrate is sequentially exposed to the tantalum precursor followed by the high frequency plasma.

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