Method of fabricating display device
First Claim
1. A method of fabricating a display device, the method comprising:
- forming a thin-film transistor, which comprises a gate electrode, a source electrode and a drain electrode, on a substrate;
forming a first insulating layer and a second insulating layer on the thin-film transistor;
forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer,providing a photoresist pattern on the common electrode material and plasma-treating a surface of the photoresist pattern provided on the common electrode material,etching the common electrode material to form the common electrode;
defining a contact hole in a region of the second insulating layer which corresponds to the drain electrode by using the plasma-treated photoresist pattern and the common electrode as a mask;
forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode; and
forming a pixel electrode, which is connected to the drain electrode, on the third insulating layer, andwherein the etching the common electrode material is performed before the plasma-treating the surface of the photoresist pattern, andwherein the etching the common electrode material uses the photoresist pattern provided on the common electrode material as a mask.
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Accused Products
Abstract
A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer.
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Citations
8 Claims
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1. A method of fabricating a display device, the method comprising:
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forming a thin-film transistor, which comprises a gate electrode, a source electrode and a drain electrode, on a substrate; forming a first insulating layer and a second insulating layer on the thin-film transistor; forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, providing a photoresist pattern on the common electrode material and plasma-treating a surface of the photoresist pattern provided on the common electrode material, etching the common electrode material to form the common electrode; defining a contact hole in a region of the second insulating layer which corresponds to the drain electrode by using the plasma-treated photoresist pattern and the common electrode as a mask; forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode; and forming a pixel electrode, which is connected to the drain electrode, on the third insulating layer, and wherein the etching the common electrode material is performed before the plasma-treating the surface of the photoresist pattern, and wherein the etching the common electrode material uses the photoresist pattern provided on the common electrode material as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification