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Semiconductor device including multiple fin heights

  • US 9,466,702 B1
  • Filed: 12/09/2015
  • Issued: 10/11/2016
  • Est. Priority Date: 12/09/2015
  • Status: Expired due to Fees
First Claim
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1. A method of making a semiconductor device comprising:

  • forming a mask on a portion of a base layer covering a substrate;

    removing a portion of the base layer from the unmasked region such that the base layer has at least two thicknesses;

    removing the mask from the base layer having at least two thicknesses;

    forming a hole in the base layer to reveal the substrate;

    depositing a sacrificial material over the base layer having two thicknesses and a hole;

    planarizing the sacrificial material;

    patterning and etching the sacrificial material to define active areas comprising the hole;

    disposing a dielectric material over the patterned and etched sacrificial material;

    patterning and etching the dielectric material to form trenches to the base layer on two opposing sides of the active area, wherein the trenches are adjacent to the sacrificial material;

    removing the sacrificial material beneath the dielectric material to form a cavity bounded by the trenches and comprising the hole;

    forming a semiconductor layer in the cavity on the base layer having two thicknesses by epitaxial lateral overgrowth;

    removing the dielectric material to expose the semiconductor layer; and

    patterning and etching the semiconductor layer to form a first fin having a first height and a second fin having a second height.

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