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Silicon-carbide trench gate MOSFETs

  • US 9,466,709 B2
  • Filed: 06/19/2015
  • Issued: 10/11/2016
  • Est. Priority Date: 12/26/2014
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a silicon-carbide (SiC) substrate of a first conductivity type;

    a drift region of the first conductivity type disposed in the SiC substrate on a front side of the SiC substrate;

    a drain region disposed on a back side of the SiC substrate;

    a shielding body region of a second conductivity type disposed in the drift region;

    a source region of the first conductivity type disposed in the shielding body region;

    a gate trench disposed in the SiC substrate, the gate trench having a depth that is greater than a depth of the source region and less than a depth of the shielding body region;

    a gate dielectric disposed on a sidewall of the gate trench and a bottom surface of the gate trench, the gate dielectric on the sidewall of the gate trench defining a first interface with the shielding body region, the gate dielectric on the bottom surface of the gate trench defining a second interface with the shielding body region;

    a gate electrode disposed on the gate dielectric; and

    a lateral channel region of the first conductivity type, the lateral channel region being disposed in the shielding body region along the second interface.

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