Semiconductor light emitting device with a light-reflecting face
First Claim
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1. A semiconductor light-emitting device, comprising:
- a plurality of semiconductor layers composed of a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, for generating light via electron-hole recombination, wherein the plurality of semiconductor layers are grown sequentially using a growth substrate;
a first electrode for providing either electrons or holes to the first semiconductor layer and electrically connected with the first semiconductor layer;
a non-conductive reflective film formed over the second semiconductor layer to reflect light from the active layer towards the first semiconductor layer which is on the growth substrate side;
a second electrode for bonding, electrically connected with the second semiconductor layer and formed over and contacted with the non-conductive reflective film for providing remaining electrons or holes to the second semiconductor layer;
a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide the remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes and for connecting the finger electrode with second electrode; and
a light-transmitting conductive film formed between the non-conductive reflective film and the second semiconductor layer, for electrically communicating the finger electrode with the second semiconductor layer;
wherein the non-conductive reflective film comprises a distributed bragg reflector (DBR).
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Abstract
The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.
18 Citations
16 Claims
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1. A semiconductor light-emitting device, comprising:
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a plurality of semiconductor layers composed of a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, for generating light via electron-hole recombination, wherein the plurality of semiconductor layers are grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to the first semiconductor layer and electrically connected with the first semiconductor layer; a non-conductive reflective film formed over the second semiconductor layer to reflect light from the active layer towards the first semiconductor layer which is on the growth substrate side; a second electrode for bonding, electrically connected with the second semiconductor layer and formed over and contacted with the non-conductive reflective film for providing remaining electrons or holes to the second semiconductor layer; a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide the remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes and for connecting the finger electrode with second electrode; and a light-transmitting conductive film formed between the non-conductive reflective film and the second semiconductor layer, for electrically communicating the finger electrode with the second semiconductor layer; wherein the non-conductive reflective film comprises a distributed bragg reflector (DBR). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification
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Current AssigneeLumens Co., Ltd.
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Original AssigneeSemicon Light Co., Ltd.
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InventorsJeon, Soo Kun, Park, Eun Hyun
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Primary Examiner(s)PIZARRO CRESPO, MARCOS D
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Application NumberUS13/877,701Publication NumberTime in Patent Office1,366 DaysField of Search257/98, 257/E33.025, 257/E33.072US Class Current1/1CPC Class CodesH01L 33/382 the electrode extending par...H01L 33/46 Reflective coating, e.g. di...
