Epi-poly etch stop for out of plane spacer defined electrode
First Claim
1. A method of forming an out-of-plane electrode, comprising:
- forming an oxide layer above an upper surface of a device layer;
etching an etch stop perimeter defining trench extending through the oxide layer;
forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench;
etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer;
depositing a first material portion within the first electrode perimeter defining trench;
depositing a second cap layer portion above the deposited first material portion; and
vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
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Accused Products
Abstract
In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
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Citations
7 Claims
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1. A method of forming an out-of-plane electrode, comprising:
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forming an oxide layer above an upper surface of a device layer; etching an etch stop perimeter defining trench extending through the oxide layer; forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench; etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer; depositing a first material portion within the first electrode perimeter defining trench; depositing a second cap layer portion above the deposited first material portion; and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification