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Epi-poly etch stop for out of plane spacer defined electrode

  • US 9,469,522 B2
  • Filed: 03/07/2014
  • Issued: 10/18/2016
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. A method of forming an out-of-plane electrode, comprising:

  • forming an oxide layer above an upper surface of a device layer;

    etching an etch stop perimeter defining trench extending through the oxide layer;

    forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench;

    etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer;

    depositing a first material portion within the first electrode perimeter defining trench;

    depositing a second cap layer portion above the deposited first material portion; and

    vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.

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