Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel
First Claim
1. A method manufacturing a thin film transistor array panel, comprising:
- forming a thin film transistor including a gate line, a semiconductor layer, a source electrode, and a data line on a substrate;
coating a solution including an organic siloxane resin represented by Chemical Formula 1;
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Abstract
A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below.
In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.
24 Citations
8 Claims
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1. A method manufacturing a thin film transistor array panel, comprising:
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forming a thin film transistor including a gate line, a semiconductor layer, a source electrode, and a data line on a substrate; coating a solution including an organic siloxane resin represented by Chemical Formula 1; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification