Flash memory controller having dual mode pin-out

• US 9,471,484 B2
• Filed: 03/15/2013
• Issued: 10/18/2016
• Est. Priority Date: 09/19/2012
• Status: Active Grant

• Current Assignee: NovaChips Canada Inc. (NovaChips Co., Ltd.)
• Original Assignee: NovaChips Canada Inc. (NovaChips Co., Ltd.)
• Inventors: Oh, HakJune, Kim, Jin-Ki, Kim, Young Goan, Lee, Hyun Woong
• Primary Examiner(s): ABAD, FARLEY J
• Application Number:
  US13/835,968
• Publication Number:
  US 20140082260A1
• Time in Patent Office: 1,313 Days
• Field of Search: 710/11, 711/120, 711/149
• US Class Current: 1/1
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 13/1668 Details of memory controller
• CPC Class Codes: G06F 13/1694 Configuration of memory controller to different memory types
• CPC Class Codes: G06F 13/385 for adaptation of a particular data processing system to different peripheral devices

Abstract

A memory controller of a data storage device, which communicates with a host, is configurable to have at least two different pinout assignments for interfacing with respective different types of memory devices. Each pinout assignment corresponds to a specific memory interface protocol. Each memory interface port of the memory controller includes port buffer circuitry configurable for different functional signal assignments, based on the selected memory interface protocol to be used. The interface circuitry configuration for each memory interface port is selectable by setting a predetermined port or registers of the memory controller.

Claims

1. A dual interface flash memory controller, comprising:

a NAND flash memory interface having

a first memory interface port including a single pad for communicating information with a memory, the first memory interface port including circuitry configured to provide a first signal compatible for communicating with the memory configured for a multi-drop bus architecture in a first memory interface protocol and configured to receive a second signal compatible for communicating with the memory configured for a serial point-to-point bus architecture in a second memory interface protocol different than the first memory interface protocol, the circuitry including a first signal path configured to drive the first signal, and a second signal path configured to buffer the second signal;

a second memory interface port including first input circuitry configured for receiving an input signal corresponding to the first memory interface protocol from a second single pad, and second input circuitry configured for receiving another input signal corresponding to the second memory interface protocol from the second single pad;

mode selector circuitry for enabling the first signal path or the second signal path in response to an applied voltage level;

and,

a host interface having host interface ports for communicating information between a host device and the memory controller.

2. The dual interface flash memory controller of claim 1, further including a pad electrically coupled to the mode selector circuitry for receiving the applied voltage level.

3. The dual interface flash memory controller of claim 1, further including a selector circuit for selectively coupling the second single pad to one of the first input circuitry or the second input circuitry in response to a selection signal having one of a first logic state and a second logic state provided by the mode selector circuitry.

4. The dual interface flash memory controller of claim 3, wherein the circuitry includes a third signal path configured to buffer a third signal, the third signal corresponding to the first memory interface protocol.

5. The dual interface flash memory controller of claim 4, wherein the third signal path includes output circuitry configured for providing an output signal corresponding to the memory interface protocol to the single pad.

6. The dual interface flash memory controller of claim 1, further including a third memory interface port including

first output circuitry configured for providing an output signal corresponding to the first memory interface protocol to a third single pad, and

second output circuitry configured for providing another output signal corresponding to the second memory interface protocol from the third single pad.

7. The dual interface flash memory controller of claim 1, further including a third memory interface port including

input circuitry configured for receiving an input signal corresponding to the first memory interface protocol from a third single pad, and

output circuitry configured for providing an output signal corresponding to the second memory interface protocol to the third single pad.

8. The dual interface flash memory controller of claim 7, further including a selector circuit for selectively coupling the third single pad to one of the input circuitry or the output circuitry in response to a selection signal having one of a first logic state and a second logic state provided by the mode selector circuitry.

9. The dual interface flash memory controller of claim 1, wherein the first memory interface protocol is an ONFi memory interface protocol and the second memory interface protocol is an HLNAND memory interface protocol.

10. The dual interface flash memory controller of claim 1, wherein the mode selector circuitry is configured to set the first memory interface port to operate with the first memory interface protocol for receiving and providing a data strobe signal in response to a first voltage, and to set the first memory interface port to operate with the second memory interface protocol for receiving a clock signal in response to a second voltage.

11. A non-volatile memory system, comprising:

a NAND flash memory controller including a channel control module having

a first input/output port including a single pad with circuitry configured to provide a first signal corresponding to a first memory interface protocol pinout and configured to receive a second signal corresponding to a second memory interface protocol pinout, the circuitry including a first signal path configured to drive the first signal, and a second signal path configured to buffer the second signal;

a second input/output port including first input circuitry configured for receiving an input signal corresponding to the first memory interface protocol from a second single pad, and second input circuitry configured for receiving another input signal corresponding to the second memory interface protocol from the second single pad;

mode selector circuitry for enabling the first signal path or the second signal path in response to an applied voltage level;

and,

at least one NAND flash memory configured for a multi-drop bus architecture or configured for a serial point-to-point bus architecture having either the first memory interface protocol pinout or the second memory interface protocol pinout in communication with the channel control module through the first input/output port and the second input/output port.

12. The non-volatile memory system of claim 11, further including a channel for electrically connecting the first input/output port and the second input/output port to the at least one NAND flash memory device.

13. The non-volatile memory system of claim 12, wherein the at least one NAND flash memory includes at least two NAND flash memory chips connected in parallel to the channel.

14. The non-volatile memory system of claim 12, wherein the at least one NAND flash memory includes at least two NAND flash memory chips connected in series in a ring topology configuration with the channel control module.

15. The non-volatile memory system of claim 11, wherein the first memory interface protocol pinout corresponds to an ONFi memory interface pinout and the second memory interface protocol pinout corresponds to an HLNAND memory interface pinout.