Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first transistor comprising silicon;
an aluminum oxide film over the first transistor; and
a second transistor over the aluminum oxide film, the second transistor comprising;
a conductor over and in contact with the aluminum oxide film; and
an oxide semiconductor over the conductor,wherein the oxide semiconductor has a lower hydrogen concentration than the silicon, andwherein a concentration of hydrogen in a region included in the oxide semiconductor is lower than or equal to 5×
1019 atoms/cm3, andwherein the oxide semiconductor overlaps with the conductor.
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Abstract
To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.
190 Citations
19 Claims
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1. A semiconductor device comprising:
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a first transistor comprising silicon; an aluminum oxide film over the first transistor; and a second transistor over the aluminum oxide film, the second transistor comprising; a conductor over and in contact with the aluminum oxide film; and an oxide semiconductor over the conductor, wherein the oxide semiconductor has a lower hydrogen concentration than the silicon, and wherein a concentration of hydrogen in a region included in the oxide semiconductor is lower than or equal to 5×
1019 atoms/cm3, andwherein the oxide semiconductor overlaps with the conductor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first transistor comprising silicon; an aluminum oxide film over the first transistor; and a second transistor over the aluminum oxide film, the second transistor comprising; a first conductor over the aluminum oxide film; a first insulator over the first conductor; a first oxide semiconductor over the first insulator; a second oxide semiconductor over the first oxide semiconductor; a second conductor and a third conductor over the second oxide semiconductor; a third oxide semiconductor over the second conductor and the third conductor; a second insulator over the third conductor; and a fourth conductor over the third conductor, wherein each of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a lower hydrogen concentration than the silicon, and wherein a concentration of hydrogen in a region included in the first oxide semiconductor is lower than or equal to 5×
1019 atoms/cm3. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first transistor comprising silicon; an aluminum oxide film over the first transistor; and a second transistor over the aluminum oxide film, the second transistor comprising; a first conductor over the aluminum oxide film; a first insulator over the first conductor, the first insulator having a projection portion; a first oxide semiconductor over the first insulator, the first oxide semiconductor in contact with a top surface of the projection portion; a second oxide semiconductor over the first oxide semiconductor; a second conductor and a third conductor over the second oxide semiconductor; a third oxide semiconductor over the second conductor and the third conductor; a second insulator over the third conductor; and a fourth conductor over the third conductor, wherein each of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a lower hydrogen concentration than the silicon, wherein a concentration of hydrogen in a region included in the first oxide semiconductor is lower than or equal to 5×
1019 atoms/cm3, andwherein the third oxide semiconductor is in contact with a side surface of the first oxide semiconductor, a top surface and a side surface of the second oxide semiconductor, and a side surface of the projection portion. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification