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Semiconductor device

  • US 9,472,678 B2
  • Filed: 12/23/2014
  • Issued: 10/18/2016
  • Est. Priority Date: 12/27/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor comprising silicon;

    an aluminum oxide film over the first transistor; and

    a second transistor over the aluminum oxide film, the second transistor comprising;

    a conductor over and in contact with the aluminum oxide film; and

    an oxide semiconductor over the conductor,wherein the oxide semiconductor has a lower hydrogen concentration than the silicon, andwherein a concentration of hydrogen in a region included in the oxide semiconductor is lower than or equal to 5×

    1019 atoms/cm3, andwherein the oxide semiconductor overlaps with the conductor.

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