Semiconductor light-emitting element comprising an insulating reflection layer including plural opening portions

• US 9,472,718 B2
• Filed: 04/26/2013
• Issued: 10/18/2016
• Est. Priority Date: 04/27/2012
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Hodota, Takashi
• Primary Examiner(s): Malsawma, Lex
• Assistant Examiner(s): Jones, Eric
• Application Number:
  US13/871,649
• Publication Number:
  US 20130285099A1
• Time in Patent Office: 1,271 Days
• Field of Search: 257/98, 257/79, 257/91
• US Class Current: 1/1
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light-emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer laminated on the p-type semiconductor layer of the laminated semiconductor layer and composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflation layer laminated on the transparent conductive layer in which plural opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer formed on the insulating reflection layer and inside the opening portions and composed of a metal containing aluminum; and a metal contact layer provided between the part of the transparent conductive layer exposed at the opening portion and the part of the metal reflection layer formed inside the opening portion, which contains an element selected from Group VIA and Group VIII of a periodic table.

Claims

1. A semiconductor light-emitting element comprising:

a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated;

a transparent conductive layer that is laminated on the p-type semiconductor layer of the laminated semiconductor layer and is composed of a metal oxide having optical transparency to light emitted from the light-emitting layer;

an insulating reflection layer that is laminated on the transparent conductive layer, in which a plurality of opening portions are provided to expose part of the upper surface of the transparent conductive layer;

a metal reflection layer that is formed on the insulating reflection layer and inside the opening portions of the insulating reflection layer, the metal reflection layer containing aluminum or an aluminum-neodymium alloy; and

a metal contact layer that is formed at least between the part of the upper surface of the transparent conductive layer exposed at the opening portion and part of the metal reflection layer formed inside the opening portion, and contains an element selected from Group VIA and Group VIII of a periodic table;

a first metal layer containing aluminum or an aluminum-neodymium alloy; and

a second metal layer containing tantalum or nickel, wherein

the first metal layer and the second metal layer are provided between the metal contact layer and the metal reflection layer.

2. The semiconductor light-emitting element according to claim 1, wherein the metal contact layer at least contains an element selected from chromium, molybdenum and nickel.

3. The semiconductor light-emitting element according to claim 2, wherein the insulating reflection layer is made of a multilayer insulating layer configured by alternately laminating a first insulating layer having a first refractive index and optical transparency to the light emitted from the light-emitting layer and a second insulating layer having a second refractive index, which is higher than the first refractive index, and optical transparency to the light emitted from the light-emitting layer.

4. The semiconductor light-emitting element according to claim 1, wherein the insulating reflection layer is made of a multilayer insulating layer configured by alternately laminating a first insulating layer having a first refractive index and optical transparency to the light emitted from the light-emitting layer and a second insulating layer having a second refractive index, which is higher than the first refractive index, and optical transparency to the light emitted from the light-emitting layer.

5. The semiconductor light-emitting element according to claim 1, wherein the insulating reflection layer is made of a multilayer insulating layer configured by alternately laminating a first insulating layer having a first refractive index and optical transparency to the light emitted from the light-emitting layer and a second insulating layer having a second refractive index, which is higher than the first refractive index, and optical transparency to the light emitted from the light-emitting layer.