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Light-emitting diode

  • US 9,472,719 B2
  • Filed: 02/18/2015
  • Issued: 10/18/2016
  • Est. Priority Date: 02/18/2015
  • Status: Active Grant
First Claim
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1. A light-emitting diode, comprising:

  • an active layer for emitting a light ray with a phase and a peak wavelength λ

    in air;

    an upper semiconductor stack on the active layer;

    a reflector; and

    a lower semiconductor stack between the active layer and the reflector,wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces,wherein each interface has a phase shift when the light ray travels through the two interfaces along a same direction, andwherein, for one of the multiple semiconductor layers traveled through by the light ray, the thickness di satisfies at least one of the following conditions of;

    (i) if the two phase shifts are the same, then 0.8*((2m−

    1)/2)*(λ

    /ni)≦

    di≦

    1.2*((2m−

    1)/2)*(λ

    /ni), where m is a natural number; and

    (ii) if the two phase shifts are different, then 0.8*((2m−

    1)/4)*(λ

    /ni)≦

    di≦

    1.2*((2m−

    1)/4)*(λ

    /ni), where m is a natural number.

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