Light-emitting diode
First Claim
Patent Images
1. A light-emitting diode, comprising:
- an active layer for emitting a light ray with a phase and a peak wavelength λ
in air;
an upper semiconductor stack on the active layer;
a reflector; and
a lower semiconductor stack between the active layer and the reflector,wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces,wherein each interface has a phase shift when the light ray travels through the two interfaces along a same direction, andwherein, for one of the multiple semiconductor layers traveled through by the light ray, the thickness di satisfies at least one of the following conditions of;
(i) if the two phase shifts are the same, then 0.8*((2m−
1)/2)*(λ
/ni)≦
di≦
1.2*((2m−
1)/2)*(λ
/ni), where m is a natural number; and
(ii) if the two phase shifts are different, then 0.8*((2m−
1)/4)*(λ
/ni)≦
di≦
1.2*((2m−
1)/4)*(λ
/ni), where m is a natural number.
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Abstract
A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.
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Citations
19 Claims
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1. A light-emitting diode, comprising:
-
an active layer for emitting a light ray with a phase and a peak wavelength λ
in air;an upper semiconductor stack on the active layer; a reflector; and a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light ray travels through the two interfaces along a same direction, and wherein, for one of the multiple semiconductor layers traveled through by the light ray, the thickness di satisfies at least one of the following conditions of; (i) if the two phase shifts are the same, then 0.8*((2m−
1)/2)*(λ
/ni)≦
di≦
1.2*((2m−
1)/2)*(λ
/ni), where m is a natural number; and(ii) if the two phase shifts are different, then 0.8*((2m−
1)/4)*(λ
/ni)≦
di≦
1.2*((2m−
1)/4)*(λ
/ni), where m is a natural number. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification