Semiconductor light emitting device

• US 9,472,739 B2
• Filed: 01/16/2015
• Issued: 10/18/2016
• Est. Priority Date: 11/26/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo
• Primary Examiner(s): Luu, Chuong A
• Application Number:
  US14/599,184
• Publication Number:
  US 20150129920A1
• Time in Patent Office: 641 Days
• Field of Search: 257/59, 257/72, 257/79, 257/98, 257/99, 257/100, 257/76, 257/81, 257/89
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a reflective layer under the light emitting structure; a first electrode layer on the first conductive semiconductor layer; a metal layer under the reflective layer; and a conductive support member under the metal layer. The reflective layer has a thickness of 650 nm to 1550 nm. A top surface of the first conductive semiconductor layer includes a flat first region adjacent to an edge and a rough second region adjacent to the first region. An edge region of a top portion of the conductive support member has a protrusion, and the edge region of the top portion of the conductive support member is not overlapped with the light emitting structure in a vertical direction.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;

a reflective layer under the light emitting structure;

a first electrode layer connected to the first conductive semiconductor layer;

a metal layer under the reflective layer; and

a conductive support member under the metal layer,

wherein the reflective layer has a thickness of 650 nm to 1550 nm,

wherein a top surface of the first conductive semiconductor layer includes a first region adjacent to an edge and a second region adjacent to the first region,

wherein the first region includes a flat surface and the second region includes a rough surface,

wherein the second region is located at a lower position than the first region in the top surface of the first conductive semiconductor layer,

wherein an edge region of a top portion of the conductive support member has a protrusion, and

wherein the edge region of the top portion of the conductive support member is not overlapped with the second region of the top surface of the first conductive semiconductor layer in a vertical direction.

2. The semiconductor light emitting device as claimed in claim 1, wherein the protrusion of the conductive support member is disposed around the metal layer.

3. The semiconductor light emitting device as claimed in claim 1, wherein the conductive support member has a width wider than that of a bottom surface of the light emitting structure.

4. The semiconductor light emitting device as claimed in claim 1, wherein the conductive support member has a width wider than that of a top surface of the metal layer.

5. The semiconductor light emitting device as claimed in claim 1, wherein the conductive support member has a width wider than that of a top surface of the reflective layer.

6. The semiconductor light emitting device as claimed in claim 1, wherein the second region of the top surface of the first conductive semiconductor layer is closer to a center region of the top surface of the first conductive semiconductor layer than to the first region of the top surface of the first conductive semiconductor layer.

7. The semiconductor light emitting device as claimed in claim 1, wherein an interface between the second region and the first region of the first conductive semiconductor layer is formed in a sloped surface.

8. The semiconductor light emitting device as claimed in claim 1, wherein the first electrode layer is disposed on closer to the second region of the top surface of the first conductive semiconductor layer than the first region of the top surface of the first conductive semiconductor layer.

17. The semiconductor light emitting device as claimed in claim 1, wherein a top surface of the first conductive semiconductor layer includes a first region adjacent to an edge and a second region adjacent to the first region,

wherein the first region includes a flat surface and the second region includes a rough surface, and

wherein the first region is disposed on a peripheral region of the second region.

18. The semiconductor light emitting device as claimed in claim 17, wherein the electrode is disposed on closer to the second region of the top surface of the first conductive semiconductor layer than the first region of the top surface of the first conductive semiconductor layer.

19. The semiconductor light emitting device as claimed in claim 17, wherein an interface between the second region and the first region of the first conductive semiconductor layer is formed in an sloped surface.

20. The semiconductor light emitting device as claimed in claim 17, wherein the edge region of the top portion of the conductive support member is not overlapped with the second region of the top surface of the first conductive semiconductor layer in a vertical region.

9. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;

a reflective layer under the light emitting structure;

a first electrode layer connected to the first conductive semiconductor layer;

a metal layer under the reflective layer; and

a conductive support member under the metal layer,

wherein the reflective layer has a thickness of 650 nm to 1550 nm,

wherein a top surface of the first conductive semiconductor layer includes a first region adjacent to an edge and a second region adjacent to the first region,

wherein the first region includes a flat surface and the second region includes a rough surface,

wherein an edge region of a top portion of the conductive support member has a protrusion, and

wherein the edge region of the top portion of the conductive support member is not overlapped with the second region of the top surface of the first conductive semiconductor layer in a vertical direction.

10. The semiconductor light emitting device as claimed in claim 9, wherein the protrusion of the conductive support member is disposed around the metal layer.

11. The semiconductor light emitting device as claimed in claim 9, wherein the conductive support member has a width wider than that of a bottom surface of the light emitting structure.

12. The semiconductor light emitting device as claimed in claim 9, wherein the conductive support member has a width wider than that of a top surfaces of the metal layer and the reflective layer.

13. The semiconductor light emitting device as claimed in claim 9, wherein the first region of the top surface of the first conductive semiconductor layer is disposed around the second region of the top surface of the first conductive semiconductor layer.

14. The semiconductor light emitting device as claimed in claim 9, wherein an interface between the second region and the first region of the first conductive semiconductor layer is formed in a sloped surface.

15. The semiconductor light emitting device as claimed in claim 9, wherein the electrode is disposed on closer to the second region of the top surface of the first conductive semiconductor layer than the first region of the top surface of the first conductive semiconductor layer.

16. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;

a reflective layer under the light emitting structure;

a first electrode layer connected to the first conductive semiconductor layer;

a metal layer under the reflective layer; and

a conductive support member under the metal layer,

wherein an edge region of a top portion of the conductive support member has a protrusion, and

wherein the protrusion of the conductive support member is disposed around the metal layer.