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Method for forming film having low resistance and shallow junction depth

  • US 9,478,415 B2
  • Filed: 02/13/2015
  • Issued: 10/25/2016
  • Est. Priority Date: 02/13/2015
  • Status: Active Grant
First Claim
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1. A method for forming on a substrate a doped silicon oxide film with a cap film, comprising:

  • (i) forming an arsenosilicate glass (ASG) film having a desired thickness as an arsenic (As)-doped silicon oxide film on a substrate;

    (ii) after completion of step (i), continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation of the treating gas so as to adsorb the treating gas on the surface of the ASG film; and

    (iii) after completion of step (ii), continuously forming a silicon nitride (SiN) film as a cap film on the treating gas-adsorbed surface of the ASG film.

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