Three dimensional memory device containing aluminum source contact via structure and method of making thereof
First Claim
1. A structure comprising:
- an alternating stack of insulating layers and electrically conductive layers located over a substrate; and
a contact via structure extending through the alternating stack;
wherein the contact via structure comprises;
an electrically conductive diffusion barrier layer; and
a combination of an aluminum portion and a non-metallic material portion, wherein the combination of the aluminum portion and the non-metallic material portion is laterally surrounded by the diffusion barrier layer.
2 Assignments
0 Petitions
Accused Products
Abstract
A low-stress contact via structure for a device employing an alternating stack of insulating layers and electrically conductive layers over a substrate can be formed by forming a trench extending to the substrate through the alternating stack. After formation of an insulating spacer and a diffusion barrier layer, a remaining volume of the trench can be filled with a combination of an aluminum portion and a non-metallic material portion to form a contact via structure. The non-metallic material portion can include a semiconductor material portion or a dielectric material portion, and can prevent reflow of the aluminum portion and generation of a cavity in subsequent thermal processes. If a semiconductor material portion is employed, the aluminum portion and the semiconductor material portion can exchange places during a metal induced crystallization anneal process of the semiconductor material.
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Citations
27 Claims
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1. A structure comprising:
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an alternating stack of insulating layers and electrically conductive layers located over a substrate; and a contact via structure extending through the alternating stack; wherein the contact via structure comprises; an electrically conductive diffusion barrier layer; and a combination of an aluminum portion and a non-metallic material portion, wherein the combination of the aluminum portion and the non-metallic material portion is laterally surrounded by the diffusion barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a structure, comprising:
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forming an alternating stack comprising insulating layers and electrically conductive layers over a substrate; forming a trench extending to the substrate through the alternating stack; forming an insulating spacer on a sidewall of the trench, wherein a cavity is provided within the insulating spacer; forming an electrically conductive diffusion barrier layer in the cavity; and filling a remaining portion of the cavity with a combination of an aluminum portion and a non-metallic material portion, wherein the combination of the aluminum portion and the non-metallic material portion and a portion of the diffusion barrier layer constitute a contact via structure extending through the alternating stack and contacting a top surface of a doped semiconductor portion. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of manufacturing a structure, comprising:
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forming an alternating stack comprising insulating layers and electrically conductive layers over a substrate; forming an opening extending through the alternating stack; forming an insulating spacer on a sidewall of the opening, wherein a cavity is provided within the insulating spacer; forming an electrically conductive diffusion barrier layer in the cavity; and filling a remaining portion of the cavity with a combination of an aluminum portion and a non-metallic material portion, wherein the combination of the aluminum portion and the non-metallic material portion and a portion of the diffusion barrier layer constitute a contact via structure extending through the alternating stack. - View Dependent Claims (26, 27)
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Specification