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Semiconductor device comprising oxide semiconductor film

  • US 9,478,535 B2
  • Filed: 08/28/2013
  • Issued: 10/25/2016
  • Est. Priority Date: 08/31/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a first insulating film over the substrate;

    a second insulating film over the first insulating film;

    a third insulating film over the second insulating film;

    a fourth insulating film over the third insulating film, the fourth insulating film comprising carbon;

    a light-transmitting conductive film over the fourth insulating film;

    a transistor comprising;

    a gate electrode;

    the first insulating film over the gate electrode; and

    a semiconductor film over the first insulating film and overlapping the gate electrode, the semiconductor film being electrically connected to the light-transmitting conductive film; and

    a capacitor comprising;

    a light-transmitting film as a first capacitor electrode over the first insulating film;

    the third insulating film and the fourth insulating film as at least part of a capacitor dielectric film over the light-transmitting film andthe light-transmitting conductive film as a second capacitor electrode over the fourth insulating film,wherein the second insulating film and the third insulating film cover the semiconductor film,wherein the second insulating film is in direct contact with a first portion of the light-transmitting film, andwherein the third insulating film is in direct contact with a second portion of the light-transmitting film.

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