Semiconductor device comprising oxide semiconductor film
First Claim
1. A semiconductor device comprising:
- a substrate;
a first insulating film over the substrate;
a second insulating film over the first insulating film;
a third insulating film over the second insulating film;
a fourth insulating film over the third insulating film, the fourth insulating film comprising carbon;
a light-transmitting conductive film over the fourth insulating film;
a transistor comprising;
a gate electrode;
the first insulating film over the gate electrode; and
a semiconductor film over the first insulating film and overlapping the gate electrode, the semiconductor film being electrically connected to the light-transmitting conductive film; and
a capacitor comprising;
a light-transmitting film as a first capacitor electrode over the first insulating film;
the third insulating film and the fourth insulating film as at least part of a capacitor dielectric film over the light-transmitting film andthe light-transmitting conductive film as a second capacitor electrode over the fourth insulating film,wherein the second insulating film and the third insulating film cover the semiconductor film,wherein the second insulating film is in direct contact with a first portion of the light-transmitting film, andwherein the third insulating film is in direct contact with a second portion of the light-transmitting film.
1 Assignment
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Accused Products
Abstract
A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.
173 Citations
32 Claims
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1. A semiconductor device comprising:
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a substrate; a first insulating film over the substrate; a second insulating film over the first insulating film; a third insulating film over the second insulating film; a fourth insulating film over the third insulating film, the fourth insulating film comprising carbon; a light-transmitting conductive film over the fourth insulating film; a transistor comprising; a gate electrode; the first insulating film over the gate electrode; and a semiconductor film over the first insulating film and overlapping the gate electrode, the semiconductor film being electrically connected to the light-transmitting conductive film; and a capacitor comprising; a light-transmitting film as a first capacitor electrode over the first insulating film; the third insulating film and the fourth insulating film as at least part of a capacitor dielectric film over the light-transmitting film and the light-transmitting conductive film as a second capacitor electrode over the fourth insulating film, wherein the second insulating film and the third insulating film cover the semiconductor film, wherein the second insulating film is in direct contact with a first portion of the light-transmitting film, and wherein the third insulating film is in direct contact with a second portion of the light-transmitting film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a substrate; a first insulating film over the substrate, the first insulating film being a first oxide insulating film; a second insulating film over the first insulating film, the second insulating film being a second oxide insulating film; a third insulating film over the second insulating film, the third insulating film being a nitride insulating film; a fourth insulating film over the third insulating film, the fourth insulating film being a third oxide insulating film, and the fourth insulating film comprising carbon; a light-transmitting conductive film over the fourth insulating film; a transistor comprising; a gate electrode; the first insulating film over the gate electrode; and a metal oxide semiconductor film over the first insulating film and overlapping the gate electrode, the metal oxide semiconductor film being electrically connected to the light-transmitting conductive film; and a capacitor comprising; a light-transmitting film as a first capacitor electrode over the first insulating film; the third insulating film and the fourth insulating film as at least part of a capacitor dielectric film over the light-transmitting film; and the light-transmitting conductive film as a second capacitor electrode over the fourth insulating film, wherein the first insulating film and the second insulating film are each in direct contact with the metal oxide semiconductor film, wherein the second insulating film and the third insulating film cover the metal oxide semiconductor film, wherein the second insulating film is in direct contact with a first portion of the light-transmitting film, and wherein the third insulating film is in direct contact with a second portion of the light-transmitting film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 29)
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22. A semiconductor device comprising:
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a substrate; a first insulating film over the substrate; a second insulating film over the first insulating film; a third insulating film over the second insulating film, the third insulating film being a nitride insulating film comprising silicon; a fourth insulating film over the third insulating film, the fourth insulating film being a oxide insulating film comprising silicon and carbon; a light-transmitting conductive film over the fourth insulating film; a transistor comprising; a gate electrode; the first insulating film over the gate electrode; and a metal oxide semiconductor film over the first insulating film and overlapping the gate electrode, the metal oxide semiconductor film being electrically connected to the light-transmitting conductive film; a capacitor comprising; a light-transmitting film as a first capacitor electrode over the first insulating film; the third insulating film and the fourth insulating film as at least part of a capacitor dielectric film over the light-transmitting film; and the light-transmitting conductive film as a second capacitor electrode over the fourth insulating film, wherein the second insulating film and the third insulating film cover the metal oxide semiconductor film, wherein the second insulating film is in direct contact with a first portion of the light-transmitting film, and wherein the third insulating film is in direct contact with a second portion of the light-transmitting film. - View Dependent Claims (23, 24, 25, 26, 27, 28, 30, 31, 32)
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Specification