Semiconductor device

• US 9,478,564 B2
• Filed: 01/07/2016
• Issued: 10/25/2016
• Est. Priority Date: 10/21/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Tsubuku, Masashi, Noda, Kosei, Toyotaka, Kouhei, Watanabe, Kazunori, Harada, Hikaru
• Primary Examiner(s): Gupta, Raj R
• Application Number:
  US14/989,927
• Publication Number:
  US 20160118418A1
• Time in Patent Office: 292 Days
• US Class Current: 1/1
• CPC Class Codes: G06F 15/76 Architectures of general purpose stored program computers with program plugboard G06F15/08; multicomputers G06F15/16
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/125 the MOSFET being a thin film transistor [TFT]
• CPC Class Codes: H10B 10/15 comprising a resistor load element
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10B 12/30 DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Claims

1. A semiconductor device comprising:

a transistor comprising;

a crystalline oxide semiconductor layer including a channel formation region and comprising oxygen, indium, zinc and a metal other than indium and zinc; and

a gate electrode over the channel formation region with an insulating film interposed therebetween,

wherein a value of off-state current through the crystalline oxide semiconductor layer of the transistor is less than or equal to 1×

10<sup>−

17</sup> A/μ

m when a channel length of the transistor is 3 μ

m, voltage between an source electrode and an drain electrode is 1V and gate voltage is in a range of −

5V to −

20V.

2. The semiconductor device according to claim 1, wherein a hydrogen concentration in the crystalline oxide semiconductor layer is less than or equal to 5×

10¹⁹ cm<sup>−

3</sup>.

3. The semiconductor device according to claim 1, wherein a carrier concentration in the crystalline oxide semiconductor layer is less than or equal to 5×

10¹⁴ cm<sup>−

3</sup>.

4. The semiconductor device according to claim 1, wherein a degree of crystallization of the crystalline oxide semiconductor layer is more than or equal to 80%.

5. The semiconductor device according to claim 1, wherein a width of the gate electrode is larger than a width of the crystalline oxide semiconductor layer in a channel width direction.

6. A memory device comprising:

a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor and a sixth transistor; and

a first wiring, a second wiring, a third wiring, a fourth wiring, and a fifth wiring,

wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the fourth wiring,

wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the fourth wiring,

wherein a gate electrode of the third transistor and a gate electrode of the fourth transistor are each electrically connected to the third wiring,

wherein one of a source electrode and a drain electrode of the third transistor is electrically connected to the first wiring,

wherein one of a source electrode and a drain electrode of the fourth transistor is electrically connected to the second wiring,

wherein one of a source electrode and a drain electrode of the fifth transistor is electrically connected to the other of the source electrode and the drain electrode of the first transistor, and the other of the source electrode and the drain electrode of the third transistor, and a gate electrode of the sixth transistor,

wherein one of a source electrode and a drain electrode of the sixth transistor is electrically connected to the other of the source electrode and the drain electrode of the second transistor, the other of the source electrode and the drain electrode of the fourth transistor, and a gate electrode of the fifth transistor,

wherein the other of the source electrode and the drain electrode of the fifth transistor is electrically connected to the fifth wiring, and

wherein the other of the source electrode and the drain electrode of the sixth transistor is electrically connected to the fifth wiring,

wherein the fifth transistor comprising,

a crystalline oxide semiconductor layer including a channel formation region and comprising oxygen, indium, zinc and a metal other than indium and zinc; and

the gate electrode over the channel formation region with an insulating film interposed therebetween, and

wherein a value of off-state current through the crystalline oxide semiconductor layer of the fifth transistor is less than or equal to 1×

10<sup>−

17</sup> A/μ

m when a channel length of the fifth transistor is 3 μ

m, voltage between the source electrode and the drain electrode is 1V and gate voltage is in a range of −

5V to −

20V.

7. The semiconductor device according to claim 6, wherein a hydrogen concentration in the crystalline oxide semiconductor layer is less than or equal to 5×

10¹⁹ cm<sup>−

3</sup>.

8. The semiconductor device according to claim 6, wherein a carrier concentration in the crystalline oxide semiconductor layer is less than or equal to 5×

10¹⁴ cm<sup>−

3</sup>.

9. The semiconductor device according to claim 6, wherein a degree of crystallization of the crystalline oxide semiconductor layer is more than or equal to 80%.

10. The semiconductor device according to claim 6, wherein a width of the gate electrode of the fifth transistor is larger than a width of the crystalline oxide semiconductor layer in a channel width direction.

11. The semiconductor device according to claim 6,

wherein a gate electrode of the first transistor is connected to the one of the source electrode and the drain electrode of the first transistor, and

wherein a gate electrode of the second transistor is connected to the one of the source electrode and the drain electrode of the second transistor.

12. The semiconductor device according to claim 6,

wherein the sixth transistor comprising

a crystalline oxide semiconductor layer including a channel formation region and comprising oxygen, indium, zinc and a metal other than indium and zinc;

and

the gate electrode over the channel formation region with an insulating film interposed therebetween, and

wherein a value of off-state current through the crystalline oxide semiconductor layer of the sixth transistor is less than or equal to 1×

10<sup>−

17</sup> A/μ

m when a channel length of the sixth transistor is 3 μ

m, voltage between the source electrode and the drain electrode is 1V and gate voltage is in a range of −

5V to −

20V.

13. A memory device comprising:

a capacitor;

a transistor comprising;

a crystalline oxide semiconductor layer including a channel formation region and comprising oxygen, indium, zinc and a metal other than indium and zinc; and

a gate electrode over the channel formation region with an insulating film interposed therebetween, and

a first wiring, a second wiring, and a third wiring,

wherein a value of off-state current through the crystalline oxide semiconductor layer of the transistor is less than or equal to 1×

10<sup>−

17</sup> A/μ

m when a channel length of the transistor is 3 μ

m, voltage between a source electrode and a drain electrode is 1V and gate voltage is in a range of −

5V to −

20V, and

wherein the first wiring is electrically connected to the gate electrode of the transistor,

wherein the second wiring is electrically connected to one of the source electrode and the drain electrode of the transistor,

wherein the other of the source electrode and the drain electrode of the transistor is electrically connected to one of a pair of electrodes of the capacitor, and

wherein the other of the pair of the electrodes of the capacitor is electrically connected to the third wiring.

14. The memory device according to claim 13, wherein a hydrogen concentration in the crystalline oxide semiconductor layer is less than or equal to 5×

10¹⁹ cm<sup>−

3</sup>.

15. The memory device according to claim 13, wherein a carrier concentration in the crystalline oxide semiconductor layer is less than or equal to 5×

10¹⁴ cm<sup>−

3</sup>.

16. The memory device according to claim 13, wherein a degree of crystallization of the crystalline oxide semiconductor layer is more than or equal to 80%.

17. The memory device according to claim 13, wherein a width of the gate electrode is larger than a width of the crystalline oxide semiconductor layer in a channel width direction.