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Semiconductor device

  • US 9,478,648 B2
  • Filed: 12/04/2015
  • Issued: 10/25/2016
  • Est. Priority Date: 01/19/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor layer of a first conductivity type;

    a second semiconductor layer of a second conductivity type provided on one surface of the first semiconductor layer;

    a third semiconductor layer of the first conductivity type selectively provided in the second semiconductor layer;

    a fourth semiconductor layer of the second conductivity type selectively provided in the second semiconductor layer so as to be adjacent and connected to the third semiconductor layer;

    trenches each penetrating the second semiconductor layer to reach the first semiconductor layer, dividing the second semiconductor layer into a base region and a floating region, the base region having the third and fourth semiconductor layers therein, one sidewall of each of the trenches abutting the third semiconductor layer;

    a fifth semiconductor layer of the second conductivity type provided below and electrically connected to another surface of the first semiconductor layer;

    an emitter electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer and electrically insulated from the floating region of the second semiconductor layer;

    a collector electrode electrically connected to the fifth semiconductor layer;

    a gate electrode provided in each of the trenches;

    a gate insulating film provided in each of the trenches between the corresponding gate electrode and the trench;

    a shield electrode provided over the floating region of the second semiconductor layer, the shield electrode being made of a material having an electrical resistivity lower than that of the gate electrode and being electrically connected to the gate electrode; and

    an insulating film provided between the shield electrode and the floating region of the second semiconductor layer.

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