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Device and method for fabricating thin semiconductor channel and buried strain memorization layer

  • US 9,478,658 B2
  • Filed: 05/20/2015
  • Issued: 10/25/2016
  • Est. Priority Date: 05/28/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer;

    a gate structure for a transistor device formed on the first semiconductor layer; and

    a memorization layer formed from a recrystallized material of the second semiconductor layer such that stress induced in the recrystallized material induces stress to a device channel formed below the gate structure in the first semiconductor layer,wherein the recrystallized material is doped with implantation ions, the implantation ions including Xe, Ar, N or combination thereof, andwherein the first semiconductor layer and the dielectric layer are not doped with the implantation ions.

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