Semiconductor device

• US 9,478,664 B2
• Filed: 12/18/2014
• Issued: 10/25/2016
• Est. Priority Date: 12/25/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Shimomura, Akihisa, Yamane, Yasumasa, Sato, Yuhei, Tanaka, Tetsuhiro, Tsubuku, Masashi, Takeuchi, Toshihiko, Tokumaru, Ryo, Ichijo, Mitsuhiro, Toriumi, Satoshi, Ohtsuki, Takashi, Endo, Toshiya
• Primary Examiner(s): Huynh, Andy
• Application Number:
  US14/575,052
• Publication Number:
  US 20150179810A1
• Time in Patent Office: 677 Days
• Field of Search: 257/43, 257/E21.409, 257/E29.296
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film over an insulating surface;

a film over the insulating surface and the oxide semiconductor film, the film being capable of blocking oxygen;

a pair of electrodes over and in contact with the film, the pair of electrodes being electrically connected to the oxide semiconductor film;

a gate insulating film over the film and the pair of electrodes; and

a gate electrode over the gate insulating film, the gate electrode overlapping with the oxide semiconductor film,

wherein the film includes a pair of first regions and a second region,

wherein the pair of first regions overlaps with the pair of electrodes,

wherein the second region does not overlap with the pair of electrodes,

wherein the second region overlaps with the gate electrode,

wherein a width of each of the pair of first regions is longer than a width of the second region in a channel width direction,

wherein at least one of the gate insulating film and an insulating film having the insulating surface has a first signal, a second signal, and a third signal,

wherein the first signal appears at a g-factor of greater than or equal to 2.037 and less than or equal to 2.039,

wherein the second signal appears at a g-factor of greater than or equal to 2.001 and less than or equal to 2.003,

wherein the third signal appears at a g-factor of greater than or equal to 1.964 and less than or equal to 1.966, and

wherein a sum of spin densities of the first signal, the second signal, and the third signal is lower than 4×

10¹⁸ spins/cm³.

2. The semiconductor device according to claim 1, wherein the film includes an oxide semiconductor.

3. The semiconductor device according to claim 1, wherein the film is further capable of blocking hydrogen and water.

4. The semiconductor device according to claim 1, further comprising:

a conductive film over the insulating surface, the conductive film overlapping with the oxide semiconductor film; and

an insulating film over the conductive film and under the oxide semiconductor film.

5. The semiconductor device according to claim 1, wherein at least one of the gate insulating film and an insulating film having the insulating surface comprises a portion with a nitrogen concentration of lower than 1×

10²⁰ atoms/cm³.

6. The semiconductor device according to claim 1, wherein at least one of the gate insulating film and an insulating film having the insulating surface comprises a portion with a hydrogen concentration of lower than 5×

10²⁰ atoms/cm³.

7. The semiconductor device according to claim 1, wherein the film overlaps with an entire portion of the oxide semiconductor film.

8. A semiconductor device comprising:

a first oxide semiconductor film over an insulating surface;

a film over the insulating surface and the first oxide semiconductor film, the film being capable of blocking oxygen;

a pair of electrodes over and in contact with the film, the pair of electrodes being electrically connected to the first oxide semiconductor film;

a second oxide semiconductor film over the pair of electrodes;

a gate insulating film over the film and the second oxide semiconductor film; and

a gate electrode over the gate insulating film, the gate electrode overlapping with the first oxide semiconductor film,

wherein the film includes a pair of first regions and a second region,

wherein the pair of first regions overlaps with the pair of electrodes,

wherein the second region does not overlap with the pair of electrodes,

wherein the second region overlaps with the gate electrode,

wherein a width of each of the pair of first regions is longer than a width of the second region in a channel width direction,

wherein at least one of the gate insulating film and an insulating film having the insulating surface has a first signal, a second signal, and a third signal,

wherein the first signal appears at a g-factor of greater than or equal to 2.037 and less than or equal to 2.039,

wherein the second signal appears at a g-factor of greater than or equal to 2.001 and less than or equal to 2.003,

wherein the third signal appears at a g-factor of greater than or equal to 1.964 and less than or equal to 1.966, and

wherein a sum of spin densities of the first signal, the second signal, and the third signal is lower than 4×

10¹⁸ spins/cm³.

9. The semiconductor device according to claim 8, wherein the film includes an oxide semiconductor.

10. The semiconductor device according to claim 8, wherein the film is further capable of blocking hydrogen and water.

11. The semiconductor device according to claim 8, further comprising:

a conductive film over the insulating surface, the conductive film overlapping with the first oxide semiconductor film; and

an insulating film over the conductive film and under the first oxide semiconductor film.

12. The semiconductor device according to claim 8, wherein at least one of the gate insulating film and an insulating film having the insulating surface comprises a portion with a nitrogen concentration of lower than 1×

10²⁰ atoms/cm³.

13. The semiconductor device according to claim 8, wherein at least one of the gate insulating film and an insulating film having the insulating surface comprises a portion with a hydrogen concentration of lower than 5×

10²⁰ atoms/cm³.

14. The semiconductor device according to claim 8, wherein the film overlaps with an entire portion of the first oxide semiconductor film.