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Oxide semiconductor film and semiconductor device

  • US 9,478,668 B2
  • Filed: 04/03/2012
  • Issued: 10/25/2016
  • Est. Priority Date: 04/13/2011
  • Status: Active Grant
First Claim
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1. An oxide semiconductor film comprising a crystalline region,wherein the crystalline region comprises a crystal,wherein a c-axis of the crystal is oriented substantially in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed,wherein a composition of the crystalline region is represented by In1+δ

  • Ga1-δ

    O3(ZnO)m (0<

    δ

    <

    1 and m=1 to 3 are satisfied),wherein a composition of the oxide semiconductor film is represented by InxGayO3(ZnO)m (0<

    x<

    2, 0<

    y<

    2, and m=1 to 3 are satisfied), andwherein the composition of the crystalline region is different from the composition of the entire oxide semiconductor film.

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