Nanoscale emitters with polarization grading

• US 9,478,699 B2
• Filed: 08/25/2011
• Issued: 10/25/2016
• Est. Priority Date: 08/26/2010
• Status: Active Grant

• Current Assignee: Ohio State University
• Original Assignee: Ohio State University
• Inventors: Myers, Roberto C., Rajan, Siddharth
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): Newton, Valerie N
• Application Number:
  US13/819,006
• Publication Number:
  US 20130207075A1
• Time in Patent Office: 1,888 Days
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0251 Graded layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 21/02636 Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/068 comprising a junction
• CPC Class Codes: H01L 29/122 Single quantum well structures single heterojunctions, couples of materials H01L29/165, H01L29/205, H01L29/225, H01L29/267
• CPC Class Codes: H01L 29/15 Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices such structures applied for the control of light G02F1/017, applied in semiconductor lasers H01S5/34
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/66469 with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/035227 : the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 31/03529 : Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/065 : the potential barriers being only of the graded gap type
• CPC Class Codes: H01L 31/109 : the potential barrier being of the PN heterojunction type
• CPC Class Codes: H01L 31/1848 : comprising nitride compounds, e.g. InGaN, InGaAlN
• CPC Class Codes: H01L 31/1852 : comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: H01L 33/04 : with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/08 : with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 : within the light emitting region
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/544 : Solar cells from Group III-V materials

Abstract

A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.

Claims

1. A device comprising:

a nanowire comprising a polar semiconductor material that is compositionally graded along the nanowire, the nanowire including an n-type region and a p-type region that are joined at a junction or junction region, wherein;

the compositionally graded polar semiconductor material in the n-type region has a first compositional gradient direction along the nanowire that defines an n-type polarization doping for the n-type region, and

the compositionally graded polar semiconductor material in the p-type region has a second compositional gradient direction along the nanowire that defines a p-type polarization doping for the p-type region,

wherein the second compositional gradient direction along the nanowire is opposite the first compositional gradient direction along the nanowire.

2. The device as set forth in claim 1, wherein at least one of the n-type region and the p-type region comprises an impurity-free polarization doped material.

3. The device as set forth in claim 1, wherein the junction or junction region includes at least one quantum well.

4. The device as set forth in claim 1, wherein the device comprises a light emitting diode.

5. A device comprising:

a nanowire comprising a group III-nitride polar semiconductor material whose group III composition is compositionally graded along the nanowire, the nanowire including an n-type region and a p-type region that are joined at a junction or junction region, wherein;

the compositionally graded polar semiconductor material in the n-type region has a first compositional gradient direction along the nanowire that defines an n-type polarization doping for the n-type region, the n-type region comprising a compositionally graded alloy of gallium nitride and aluminum nitride having an Al/Ga composition that is graded in the first compositional gradient direction, and

the compositionally graded polar semiconductor material in the p-type region has a second compositional gradient direction along the nanowire that defines a p-type polarization doping for the p-type region, the p-type region comprising a compositionally graded alloy of gallium nitride and aluminum nitride having an Al/Ga composition that is graded in the second compositional direction opposite the first compositional direction,

wherein the second compositional gradient direction along the nanowire is opposite the first compositional gradient direction along the nanowire.

6. The device as set forth in claim 5, wherein the n-type region is compositionally graded from GaN distal from the junction or junction region to AlN proximate to the junction or junction region and the p-type region is compositionally graded from AlN proximate to the junction or junction region to GaN distal from the junction or junction region.

7. The device as set forth in claim 5, wherein the n-type region is compositionally graded from GaN distal from the junction or junction region to Al_xGa_1-xN proximate to the junction or junction region and the p-type region is compositionally graded from Al_xGa_1-xN proximate to the junction or junction region to GaN distal from the junction or junction region, where x is a value greater than zero and less than or equal to one.

8. The device as set forth in claim 7, wherein the nanowire comprises a plurality of parallel nanowires extending away from a substrate.

9. The device as set forth in claim 8, wherein the device further comprises:

a GaN electrical contact disposed over ends of the plurality of parallel nanowires distal from the substrate.

10. The device as set forth in claim 8, wherein the device further comprises:

a coalesced GaN electrical contact disposed over ends of the plurality of parallel nanowires distal from the substrate.

11. A device comprising:

at least one nanowire having a first end and an opposite second end, the nanowire comprising a polar semiconductor material that is compositionally graded along the nanowire from the first end to the second end to define a polarization doping profile along the nanowire from the first end to the second end;

a first electrode electrically coupled with the first end of the at least one nanowire; and

a second electrode electrically coupled with the opposite second end of the at least one nanowire.

12. The device as set forth in claim 11, wherein:

the polar semiconductor material comprises an alloy of a first polar semiconductor material (X) and second polar semiconductor material (Y), and

the compositional grading along the nanowire from the first end to the second end defines;

a p-type region compositionally graded toward higher Y/X ratio alloy moving away from the first end and toward the second end such that the p-type region has p-type polarization doping, and

an n-type region compositionally graded toward lower Y/X ratio alloy moving away from the first end and toward the second end such that the n-type region has n-type polarization doping,

wherein the p-type region and the n-type region are joined at a junction or junction region to define a diode.

17. The device as set forth in claim 11, wherein:

the polar semiconductor material comprises an alloy of GaN and InN.

18. The device as set forth in claim 17, further comprising:

photodetector readout electronics operatively connected with the first and second electrodes and generating a light intensity output responsive to a photocurrent generated in the at least one nanowire.

19. The device as set forth in claim 11, wherein the at least one nanowire comprises a plurality of parallel nanowires.

20. The device as set forth in claim 11, wherein the first electrical contact comprises an electrically conductive substrate to which the first ends of the nanowires are secured, the electrically conductive substrate supporting the nanowires.

21. The device as set forth in claim 11, further comprising an electrical bias applied across the at least one nanowire via the first and second electrodes.

13. The device of 12, wherein the first polar semiconductor material (X) is gallium nitride (GaN) and the second polar semiconductor material (Y) is aluminum nitride (AlN).

14. The device of 13, wherein the first end of the nanowire comprises GaN that is not alloyed with AlN.

15. The device of 14, wherein the junction or junction region comprises AlN that is not alloyed with GaN.

16. The device of 14, wherein the junction or junction region comprises a quantum well having a lower Y/X ratio than material of the adjacent p-type or n-type regions.