Vertical topology light emitting device
First Claim
1. A light emitting device, comprising:
- a metal support structure comprising Cu;
an adhesion structure on the metal support structure and comprising Au;
a reflective conductive contact on the adhesion structure;
a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer;
a top interface layer on the GaN-based semiconductor structure and comprising Ti; and
a contact pad on the top interface layer and comprising Au.
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Accused Products
Abstract
A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
126 Citations
19 Claims
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1. A light emitting device, comprising:
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a metal support structure comprising Cu; an adhesion structure on the metal support structure and comprising Au; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, the GaN-based semiconductor structure comprising a first-type GaN layer, an active layer, and a second-type GaN layer; a top interface layer on the GaN-based semiconductor structure and comprising Ti; and a contact pad on the top interface layer and comprising Au. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting device, comprising:
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a metal support structure; an adhesion structure on the metal support structure and comprising Au; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure comprising a p-type GaN layer on the reflective conductive contact, an active layer on the p-type GaN layer, and an n-type GaN layer on the active layer; and an electrical contact on the GaN-based semiconductor structure, wherein the electrical contact comprises; an n-type interface layer on the GaN-based semiconductor structure comprising Ti; and a contact pad on the n-type interface layer comprising Au. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification