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Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

  • US 9,478,730 B2
  • Filed: 04/18/2013
  • Issued: 10/25/2016
  • Est. Priority Date: 12/31/2010
  • Status: Active Grant
First Claim
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1. A magnetic junction for use in a magnetic device comprising:

  • a pinned layer;

    a nonmagnetic spacer layer; and

    a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer;

    wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and

    wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, each of the at least one insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, the at least two magnetic layers being magnetically coupled;

    wherein the at least two magnetic layers include a first magnetic and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including B; and

    wherein the at least one of the first magnetic layer and the second magnetic layer includes Cox1Fex2Nix3Mnx4M1y1M2y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga.

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