Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
First Claim
1. A magnetic junction for use in a magnetic device comprising:
- a pinned layer;
a nonmagnetic spacer layer; and
a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, each of the at least one insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, the at least two magnetic layers being magnetically coupled;
wherein the at least two magnetic layers include a first magnetic and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including B; and
wherein the at least one of the first magnetic layer and the second magnetic layer includes Cox1Fex2Nix3Mnx4M1y1M2y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga.
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Accused Products
Abstract
A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.
36 Citations
18 Claims
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1. A magnetic junction for use in a magnetic device comprising:
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a pinned layer; a nonmagnetic spacer layer; and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer; wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, each of the at least one insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr, the at least two magnetic layers being magnetically coupled; wherein the at least two magnetic layers include a first magnetic and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including B; and wherein the at least one of the first magnetic layer and the second magnetic layer includes Cox1Fex2Nix3Mnx4M1y1M2y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A magnetic junction for use in a magnetic device comprising:
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a pinned layer; a nonmagnetic spacer layer; and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer; wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, the at least one insertion layer including a nonmagnetic material, the at least two magnetic layers being magnetically coupled, the at least two magnetic layers include a first magnetic and a second magnetic layer; wherein the at least one of the first magnetic layer and the second magnetic layer includes Cox1Fex2Nix3Mnx4M1y1M2y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga.
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14. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, each of the at least one insertion layer including at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Zn, Ba, K, Na, Rb, Pb, and Zr, the at least two magnetic layers being magnetically coupled, the at least two magnetic layers including a first magnetic and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including B, the at least one of the first magnetic layer and the second magnetic layer including Cox1Fex2Nix3Mnx4M1y1M2y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga; and a plurality of bit lines. - View Dependent Claims (15, 16, 17)
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18. A magnetic memory comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, the at least one insertion layer including a nonmagnetic material, the at least two magnetic layers being magnetically coupled, wherein the at least two magnetic layers include a first magnetic layer and a second magnetic layer, at least one of the first magnetic layer and the second magnetic layer includes Cox1Fex2Nix3Mnx4M1y1M2y2, where x1, x2, x3, y1, y2 and y3 are each at least 0 and not more than one and wherein x1+x2+x3+x4+y1+y2=1 and M1 and M2 are selected from Ta, B, Zr, Cr, V, Al, Be, Ti, Au, Hf, Pd, Pt, Bi and Ga; and a plurality of bit lines.
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Specification