Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

• US 9,478,945 B2
• Filed: 05/15/2012
• Issued: 10/25/2016
• Est. Priority Date: 06/15/2011
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Avramescu, Adrian Stefan, Pietzonka, Ines, Dini, Dimitri
• Primary Examiner(s): SHINGLETON, MICHAEL B
• Application Number:
  US14/126,047
• Publication Number:
  US 20140138703A1
• Time in Patent Office: 1,624 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure

Abstract

An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

Claims

1. An optoelectronic semiconductor body comprising:

a substrate;

a tensioned layer applied in a first epitaxy step to the substrate, wherein the tensioned layer has a recess formed vertically in the tensioned layer, the recess comprising a recess of a first type and a recess of a second type, the recess of the first type having a width of 5 μ

m to 100 μ

m, and the recess of the second type having a width of 0.1 μ

m to 5 μ

m, wherein the width of the recess of the first type is larger than the width of the recess of the second type; and

a further layer is applied to the tensioned layer in a second epitaxy step, the further layer filling up the recess and at least regionally covering the tensioned layer.

2. The optoelectronic semiconductor body according to claim 1, wherein the deviation of the lattice constant of the further layer from the lattice constant of the substrate is less than the deviation of the lattice constant of the tensioned layer from the lattice constant of the substrate.

3. The optoelectronic semiconductor body according to claim 1, wherein the lattice constant of the tensioned layer is less than the lattice constant of the substrate and at the same time the lattice constant of the further layer is greater than the lattice constant of the substrate.

4. The optoelectronic semiconductor body according to claim 1, wherein the tensioned layer is thinned in the recess.

5. The optoelectronic semiconductor body according to claim 1, wherein the tensioned layer is entirely interrupted in the recess.

6. The optoelectronic semiconductor body according to claim 1, wherein the further layer completely covers the tensioned layer.

7. The optoelectronic semiconductor body according to claim 1, wherein the tensioned layer has a thickness between 0.5 μ

m and 5 μ

m.

11. The optoelectronic semiconductor body according to claim 1, wherein the substrate comprises GaN and the tensioned layer is a shell layer made of In_xAl_yGa_1-x-yN (0≦

x≦

0.1 and 0≦

y≦

1).

12. The optoelectronic semiconductor body according to claim 11, wherein an intermediate layer made of In_xGa_1-xN (0≦

x≦

0.5) is applied between the shell layer and the substrate.

13. The optoelectronic semiconductor body according to claim 12, wherein the intermediate layer is electrically conductive and/or compressively tensioned.

14. The optoelectronic semiconductor body according to claim 1, wherein the substrate comprises GaN and the tensioned layer is a Bragg mirror made of alternating layers of In_xGa_1-xN (0≦

x≦

0.2) and Al_yGa_1-yN (0≦

y≦

1).

15. The optoelectronic semiconductor body according to claim 1, wherein the further layer grown in the second epitaxy step has an n-conductivity.

16. The optoelectronic semiconductor body according to claim 15, wherein, on the further layer grown in the second epitaxy step, the following layers follow one another in the growth direction:

an active zone; and

a layer having a second p-conductivity.

17. An optoelectronic component, which was isolated from an optoelectronic semiconductor body according to claim 16.

18. The optoelectronic component according to claim 17, wherein the tensioned layer is laterally overgrown by an n-conductive layer.

8. An optoelectronic semiconductor body comprising:

a substrate;

a tensioned layer, which is applied in a first epitaxy step to the substrate, wherein the tensioned layer has a recess formed vertically in the tensioned layer; and

a further layer is applied to the tensioned layer in a second epitaxy step, the further layer filling up the recess and at least regionally covers the tensioned layer, wherein the lattice constant of the tensioned layer is less than the lattice constant of the substrate and at the same time the lattice constant of the further layer is greater than the lattice constant of the substrate.

9. The optoelectronic semiconductor body according to claim 8, wherein the recess comprises a recess of a first type and a recess of a second type.

10. The optoelectronic semiconductor body according to claim 9, wherein the recess of the second type has a width of 0.1 μ

m to 5 μ

m.

19. The optoelectronic semiconductor body according to claim 9, wherein the recess of the first type has a width of 5 μ

m to 100 μ

m.