Spectral sensitive solid-state photodetector
First Claim
1. A method for detecting photons, comprising:
- subjecting a semi-conductive material of a photodiode to a bias voltage such that an avalanche phenomenon is triggered in an avalanche layer of the semi-conductive material when a photon reaches the avalanche layer,wherein the avalanche layer extends between minimum and maximum depths into the semi-conductive material from a surface thereof so that the avalanche layer can be reached by a photon having a wavelength ranging between minimum and maximum wavelengths,the method further comprising;
generating, by the photodiode, a signal having an amplitude depending on a depth reached by a photon within the avalanche layer, the signal being generated with a gain that varies as a function of a wavelength of the photon received by the photodiode,comparing, by a measuring circuit connected to the photodiode, the amplitude of the signal generated by the photodiode with two different threshold values, anddeducing, by the measuring circuit, that the photon received by the photodiode has a wavelength between two threshold wavelengths ranging between the minimum and maximum wavelengths, if the amplitude of the signal is between the two threshold values.
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Abstract
A method for detecting photons includes subjecting a photodiode formed in a semi-conductive material, to a bias voltage such that an avalanche phenomenon can appear when a photon enters the photodiode in an avalanche layer extending into the semi-conductive material down to minimum and maximum depths so that it can be reached by photons having a wavelength between minimum and maximum wavelengths. The method also includes comparing the amplitude of a signal supplied by the photodiode with two threshold values, and deducing that the photodiode received a photon having a wavelength between two threshold wavelengths ranging between the minimum and maximum wavelengths, if the amplitude of the signal is between the two threshold values.
8 Citations
28 Claims
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1. A method for detecting photons, comprising:
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subjecting a semi-conductive material of a photodiode to a bias voltage such that an avalanche phenomenon is triggered in an avalanche layer of the semi-conductive material when a photon reaches the avalanche layer, wherein the avalanche layer extends between minimum and maximum depths into the semi-conductive material from a surface thereof so that the avalanche layer can be reached by a photon having a wavelength ranging between minimum and maximum wavelengths, the method further comprising; generating, by the photodiode, a signal having an amplitude depending on a depth reached by a photon within the avalanche layer, the signal being generated with a gain that varies as a function of a wavelength of the photon received by the photodiode, comparing, by a measuring circuit connected to the photodiode, the amplitude of the signal generated by the photodiode with two different threshold values, and deducing, by the measuring circuit, that the photon received by the photodiode has a wavelength between two threshold wavelengths ranging between the minimum and maximum wavelengths, if the amplitude of the signal is between the two threshold values. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A device for detecting photons, comprising
a photodiode formed in a semi-conductive material, a bias circuit connected to the photodiode and configured to subject the semi-conductive material to a bias voltage such that an avalanche phenomenon is triggered in an avalanche layer of the semi-conductive material when a photon reaches the avalanche layer, wherein the avalanche layer extends between minimum and maximum depths into the semi-conductive material from a surface thereof so that the avalanche layer can be reached by photons having a wavelength between minimum and maximum wavelengths, and wherein the photodiode generates a signal having an amplitude depending on a depth reached by a photon within the avalanche layer, the signal being generated with a gain that varies as a function of a wavelength of the photon received by the photodiode, and a measurement circuit connected to the photodiode and configured to compare the amplitude of the signal generated by the photodiode with two different threshold values, and to deduce that the photon received by the photodiode has a wavelength between two threshold wavelengths ranging between the minimum and maximum wavelengths, if an amplitude of the signal is between the two threshold values.
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19. An imager, comprising several detection devices, each comprising:
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a photodiode formed in a semi-conductive material, a bias circuit connected to the photodiode and configured to subject the semi-conductive material to a bias voltage such that an avalanche phenomenon is triggered in an avalanche layer of the semi-conductive material when a photon reaches the avalanche layer, wherein the avalanche layer extends between minimum and maximum depths into the semi-conductive material from a surface thereof so that the avalanche layer can be reached by photons having a wavelength between minimum and maximum wavelengths, and wherein the photodiode generates a signal having an amplitude depending on a depth reached by a photon within the avalanche layer, the signal being generated with a gain that varies as a function of a wavelength of the photon received by the photodiode, and a measurement circuit connected to the photodiode and configured to compare the amplitude of the signal supplied by the photodiode with two different threshold values, and to deduce that the photon received by the photodiode has a wavelength between two threshold wavelengths ranging between the minimum and maximum wavelengths, if an amplitude of the signal is between the two threshold values, wherein the photodiodes of the detection devices are disposed according to a matrix configuration. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification