Determination of word line to local source line shorts
First Claim
1. A method of determining whether one or more blocks of a semiconductor memory device are defective, the semiconductor memory device comprising a plurality of blocks, each block formed of a plurality of NAND strings having multiple memory cells connected in series between a source select gate and a drain select gate, the memory cells being respectively connected along word lines and the one or more source and drain select gates being respectively connected along a source select line and a drain select line, where each block is connected through a corresponding source select gate to a local source line, the method comprising:
- performing a stress operation on a selected block of the plurality of blocks, comprising;
applying a high voltage to the local source line; and
concurrently setting the word lines, source select line, and drain select line to a low voltage;
subsequent to the stress operation, performing a defect determination operation, including;
performing a write operation on the selected block; and
determining whether the write operation was successful;
wherein the semiconductor memory device is a monolithic three-dimensional semiconductor memory device where the multiple memory cells are arranged in multiple physical levels above a silicon substrate and comprise a charge storage medium; and
wherein the NAND strings and the local source line run in a vertical direction relative to the substrate, and the word lines and the source select and drain select lines run in a horizontal direction relative to the substrate.
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Accused Products
Abstract
A number of techniques determine defects in non-volatile memory arrays, which are particularly applicable to 3D NAND memory, such as BiCS type. Word line to word line shorts within a memory block are determined by application of an AC stress mode, followed by a defect detection operation. An inter-block stress and detection operation can be used to determine word line to word line leaks between different blocks. Select gate leak line leakage, for both the word lines and other select lines, is considered, as are shorts from word lines and select lines to local source lines. In addition to word line and select line defects, techniques determine shorts between bit lines and low voltage circuitry, such as in sense amplifiers.
130 Citations
19 Claims
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1. A method of determining whether one or more blocks of a semiconductor memory device are defective, the semiconductor memory device comprising a plurality of blocks, each block formed of a plurality of NAND strings having multiple memory cells connected in series between a source select gate and a drain select gate, the memory cells being respectively connected along word lines and the one or more source and drain select gates being respectively connected along a source select line and a drain select line, where each block is connected through a corresponding source select gate to a local source line, the method comprising:
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performing a stress operation on a selected block of the plurality of blocks, comprising; applying a high voltage to the local source line; and concurrently setting the word lines, source select line, and drain select line to a low voltage; subsequent to the stress operation, performing a defect determination operation, including; performing a write operation on the selected block; and determining whether the write operation was successful; wherein the semiconductor memory device is a monolithic three-dimensional semiconductor memory device where the multiple memory cells are arranged in multiple physical levels above a silicon substrate and comprise a charge storage medium; and wherein the NAND strings and the local source line run in a vertical direction relative to the substrate, and the word lines and the source select and drain select lines run in a horizontal direction relative to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification