Power savings via selection of SRAM power source
First Claim
1. A computer-implemented method for supplying power to a memory module, the method comprising:
- determining that a first circuit element within the memory module operates at a first voltage level;
determining that a second circuit element within the memory module operates at a nominal voltage level;
determining that the first voltage level exceeds the nominal voltage level by a first margin, wherein the first margin reflects an upper bound to noise associated with the nominal voltage level; and
causing the second circuit element to operate at the first voltage level.
1 Assignment
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Accused Products
Abstract
A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.
5 Citations
20 Claims
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1. A computer-implemented method for supplying power to a memory module, the method comprising:
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determining that a first circuit element within the memory module operates at a first voltage level; determining that a second circuit element within the memory module operates at a nominal voltage level; determining that the first voltage level exceeds the nominal voltage level by a first margin, wherein the first margin reflects an upper bound to noise associated with the nominal voltage level; and causing the second circuit element to operate at the first voltage level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A subsystem configured to supply power to a memory module, comprising:
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a first circuit element within the memory module that operates at a first voltage level; a second circuit element within the memory module that operates at a nominal voltage level; and a control circuit configured to; determine that the first voltage level exceeds the nominal voltage level by a first margin, wherein the first margin reflects an upper bound to noise associated with the nominal voltage level, and apply the first voltage level to the second circuit element. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A computing device configured to supply power to a memory module, comprising:
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a first circuit element within the memory module that operates at a first voltage level; a second circuit element within the memory module that operates at a nominal voltage level; and a control circuit configured to; determine that the first voltage level exceeds the nominal voltage level by a first margin, wherein the first margin reflects an upper bound to noise associated with the nominal voltage level, and apply the first voltage level to the second circuit element. - View Dependent Claims (18, 19, 20)
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Specification