Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
First Claim
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1. A showerhead-cooler system of a semiconductor-processing chamber of a CCP plasma processing apparatus intended for processing of objects with a plasma process, comprising:
- a showerhead having a plurality of through gas holes;
a gas-feeding cooler plate that is connected to an RF power supply, has electrical contact with the showerhead, and forms with the showerhead a gas-accumulation reservoir that communicates with the through gas holes of the showerhead;
a gas-feeding cooler plate has a plurality of through gas-feeding passages that communicate with the gas-accumulating reservoir;
a showerhead having a front side that faces the semiconductor-processing chamber, a back side that faces the cooler plate, a peripheral portion, which is in said electrical contact with the cooler plate, and a central area which has a showerhead center C;
on the back side of the showerhead the through gas holes of the showerhead having conical nozzles with a cone angle θ
that decreases in the direction from the peripheral portion to the showerhead center;
the object being a semiconductor wafer, each through gas hole has a diameter dH, a length IH, and being located at a predetermined radial distance R from the showerhead center and wherein the following relationship exists between the cone angle θ
of the conical nozzle of a through gas hole and a radial distance R of the gas hole from the showerhead center;
1+bR)=[1−
1/{1−
[(2IH tan θ
/dH]}4]−
1/2
(1)where “
b”
is a coefficient that depends on the parameters of the plasma process.
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Abstract
Proposed is a showerhead-cooler system of a semiconductor-processing chamber with uniform distribution of plasma density. The showerhead has a plurality of through gas holes that are coaxial with respective channels of the gas-feeding cooler plate. On the gas inlet side, the though passages of the showerhead are provided with unequal conical nozzles characterized by a central angle that decreases from the peripheral part of the showerhead to the showerhead center. Such design provides uniformity of plasma density. Furthermore, in order to protect the walls of the nozzle and the walls of the gas holes from erosion that may be caused by the hollow-cathode phenomenon, these areas are coated with a thin protective coating that is resistant to electrical breakdown and chemical corrosion.
91 Citations
11 Claims
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1. A showerhead-cooler system of a semiconductor-processing chamber of a CCP plasma processing apparatus intended for processing of objects with a plasma process, comprising:
- a showerhead having a plurality of through gas holes;
a gas-feeding cooler plate that is connected to an RF power supply, has electrical contact with the showerhead, and forms with the showerhead a gas-accumulation reservoir that communicates with the through gas holes of the showerhead;
a gas-feeding cooler plate has a plurality of through gas-feeding passages that communicate with the gas-accumulating reservoir;
a showerhead having a front side that faces the semiconductor-processing chamber, a back side that faces the cooler plate, a peripheral portion, which is in said electrical contact with the cooler plate, and a central area which has a showerhead center C;
on the back side of the showerhead the through gas holes of the showerhead having conical nozzles with a cone angle θ
that decreases in the direction from the peripheral portion to the showerhead center;
the object being a semiconductor wafer, each through gas hole has a diameter dH, a length IH, and being located at a predetermined radial distance R from the showerhead center and wherein the following relationship exists between the cone angle θ
of the conical nozzle of a through gas hole and a radial distance R of the gas hole from the showerhead center;
1+bR)=[1−
1/{1−
[(2IH tan θ
/dH]}4]−
1/2
(1)where “
b”
is a coefficient that depends on the parameters of the plasma process.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- a showerhead having a plurality of through gas holes;
Specification
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Current AssigneeAnna Ryaboy, Tatiana Kerzhner, Yuri Glukhoy
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Original AssigneeAnna Ryaboy, Tatiana Kerzhner, Yuri Glukhoy
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InventorsGlukhoy, Yuri
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Primary Examiner(s)Zervigon, Rudy
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Application NumberUS14/164,182Publication NumberTime in Patent Office1,011 DaysField of Search118/723.E, 118/723.ER, 15634543-34547US Class Current1/1CPC Class CodesC23C 16/4404 Coatings or surface treatme...C23C 16/45565 Shower nozzlesC23C 16/45572 Cooled nozzlesC23C 16/45585 Compression of gas before i...C23C 16/50 using electric discharges g...C23C 16/505 using radio frequency disch...C23C 16/509 using internal electrodesC23C 16/5096 Flat-bed apparatusH01J 37/32091 the radio frequency energy ...H01J 37/3244 Gas supply meansH01J 37/32449 Gas control, e.g. control o...H01J 37/32477 characterised by the means ...
