Semiconductor structures including liners comprising alucone and related methods

• US 9,484,196 B2
• Filed: 02/25/2014
• Issued: 11/01/2016
• Est. Priority Date: 02/25/2014
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Song, Zhe, Allen, Tuman E., Franklin, Cole S., Gealy, Dan
• Primary Examiner(s): Doan, Nga
• Application Number:
  US14/189,323
• Publication Number:
  US 20150243709A1
• Time in Patent Office: 980 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 63/20 comprising selection components having two electrodes, e.g. diodes
• CPC Class Codes: H10B 63/24 of the Ovonic threshold switching type
• CPC Class Codes: H10N 70/021 Formation of the switching material, e.g. layer deposition
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/235 between different crystalline phases, e.g. cubic and hexagonal
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/882 Compounds of sulfur, selenium or tellurium, e.g. chalcogenides

Abstract

A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Claims

1. A semiconductor structure, comprising:

stack structures comprising at least two chalcogenide materials overlying a substrate; and

a liner comprising alucone on sidewalls of at least a portion of the stack structures.

2. The semiconductor structure of claim 1, wherein the liner comprises a first portion and a second portion, the first portion comprising a lower concentration of alucone than the second portion.

3. The semiconductor structure of claim 1, wherein the liner comprises aluminum oxide and alucone.

4. The semiconductor structure of claim 1, wherein the liner comprises a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures and a second portion comprising alucone over the first portion.

5. The semiconductor structure of claim 1, wherein the liner comprises a gradient of alucone and aluminum oxide, the liner comprising approximately zero percent alucone proximal to the sidewalls of the stack structures and approximately one hundred percent alucone distal to the sidewalls of the stack structures.

6. The semiconductor structure of claim 1, wherein the liner further comprises at least one of silicon or nitrogen.

7. The semiconductor structure of claim 1, further comprising a tungsten material overlying the substrate.

8. The semiconductor device of claim 1, wherein at least one of the at least two chalcogenide materials comprises a switching diode material or a phase change material.

9. The semiconductor device of claim 1, wherein the liner overlies and contacts the at least two chalcogenide materials.

10. The semiconductor device of claim 1, wherein the stack structures comprise a carbon material, the liner overlying the carbon material.

11. A semiconductor device, comprising:

stack structures over a substrate; and

a liner comprising alucone over sidewalls of the stack structures, the liner comprising a first portion and a second portion, the first portion comprising a lower concentration of alucone than the second portion.

12. The semiconductor device of claim 11, wherein the first portion comprises aluminum oxide contacting sidewalls of the stack structures and the second portion comprises the alucone over the first portion.

13. The semiconductor device of claim 11, wherein the liner has a thickness of between about 10 Å

and about 30 Å

.

14. The semiconductor device of claim 11 wherein the alucone further comprises between about 10 atomic percent and about 20 atomic percent silicon.

15. The semiconductor device of claim 11, wherein the liner further comprises aluminum oxide, a ratio of aluminum oxide to alucone ranging from between about 1:

1 to about 1;

10.

16. A method of forming a semiconductor device, the method comprising:

forming stack structures over a substrate;

forming a liner comprising alucone over the stack structures, wherein forming the liner comprises forming a first portion of the liner comprising a lower concentration of alucone than a second portion of the liner; and

removing the liner from a bottom portion of trenches between the stack structures while leaving the liner on sidewalls of the stack structures.

17. The method of claim 16, wherein forming stack structures over a substrate comprises forming stack structures comprising at least two chalcogenide materials over the substrate.

18. The method of claim 16, wherein forming a liner comprising alucone over the stack structures comprises conformally forming the first portion comprising an aluminum oxide material on sidewalls of the stack structures and forming the second portion comprising alucone over the first portion.

19. The method of claim 16, wherein forming a liner comprising alucone over the stack structures comprises forming the alucone by molecular layer deposition with TMA and ethylene glycol precursors.

20. The method of claim 16, further comprising oxidizing the liner comprising alucone.

21. The method of claim 16, wherein removing the liner from a bottom portion of trenches between the stack structures comprises plasma etching the liner.

22. The method of claim 16, further comprising extending a depth of the trenches after removing the liner from the bottom portion of the trenches.

23. The method of claim 16, further comprising removing the liner from the sidewalls of the stack structures.

24. The method of claim 16, wherein forming a liner comprising alucone over the stack structures comprises forming the liner comprising alucone and aluminum oxide.