Patternable dielectric film structure with improved lithography and method of fabricating same
First Claim
1. A method of fabricating an interconnect structure comprising:
- providing an inorganic antireflective coating atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La;
depositing at least one patternable low-k material on a surface of said inorganic reflective coating, wherein said at least one patternable low-k material comprises a composition of a functionalized polymer, and a photoacid generator, wherein said functionalized polymer comprises a carbosilane or an oxycarbosilane and contains one or more irradiation/acid sensitive imageable groups;
forming at least one interconnect pattern within said at least one patternable low-k material, said at least one interconnect pattern is formed without utilizing a separate photoresist material; and
curing said at least one patternable low-k material to provide a dielectric material, said dielectric having a dielectric constant of not more than 4.3, and wherein said curing is performed after forming said at least one interconnect pattern into said at least one patternable low-k material.
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Accused Products
Abstract
A method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating. The inorganic antireflective coating is vapor deposited and contains atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. At least one interconnect pattern is then formed within the at least one patternable low-k material. Next, the at least one patternable low-k material containing the at least one interconnect pattern is cured.
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Citations
13 Claims
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1. A method of fabricating an interconnect structure comprising:
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providing an inorganic antireflective coating atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; depositing at least one patternable low-k material on a surface of said inorganic reflective coating, wherein said at least one patternable low-k material comprises a composition of a functionalized polymer, and a photoacid generator, wherein said functionalized polymer comprises a carbosilane or an oxycarbosilane and contains one or more irradiation/acid sensitive imageable groups; forming at least one interconnect pattern within said at least one patternable low-k material, said at least one interconnect pattern is formed without utilizing a separate photoresist material; and curing said at least one patternable low-k material to provide a dielectric material, said dielectric having a dielectric constant of not more than 4.3, and wherein said curing is performed after forming said at least one interconnect pattern into said at least one patternable low-k material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a dual-damascene interconnect structure comprising:
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providing an inorganic antireflective coating atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; depositing a first patternable low-k material on a surface of said inorganic reflective coating, wherein said first patternable low-k material comprises a composition of a functionalized polymer, and a photoacid generator, wherein said functionalized polymer comprises a carbosilane or an oxycarbosilane and contains one or more irradiation/acid sensitive imageable groups; forming first interconnect patterns within the patternable low-k material without utilizing a separate photoresist material; providing a second patternable low-k material on the first patternable low-k material including within said first interconnect patterns, wherein said second patternable low-k material comprises a composition of another functionalized polymer, and another photoacid generator, wherein said another functionalized polymer contains one or more irradiation/acid sensitive imageable groups; forming second interconnect patterns within said second patternable low-k material without utilizing the separate photoresist material; and curing at least said second patternable low-k material, wherein said curing of at least said second patternable low-k material is performed after forming second interconnect patterns within said second patternable low-k material. - View Dependent Claims (10, 11, 12, 13)
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Specification