Patternable dielectric film structure with improved lithography and method of fabricating same

• US 9,484,248 B2
• Filed: 08/26/2011
• Issued: 11/01/2016
• Est. Priority Date: 09/20/2007
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Lin, Qinghuang, Neumayer, Deborah A.
• Primary Examiner(s): Li, Meiya
• Application Number:
  US13/219,144
• Publication Number:
  US 20110312177A1
• Time in Patent Office: 1,894 Days
• Field of Search: 257632-637, 257/642, 257/643, 257/750, 257/751, 257/753, 257/758, 257/759, 257/760, 257/762, 257/767, 257/774, 257/E23.041, 257E23116-E2312, 257/E23.134, 257/E23.142, 257/E23.151, 257/E23.154, 257/E23.167, 257/E23.175, 257/E21.273, 257/E21.492, 257/E21.575, 257/E21.576, 257/E21.579, 257/E21.581, 257/E21.583, 257/E21.16, 257/E21.241, 257/E21.242, 257/E29.255, 438/253, 438622-624, 438627-629, 438/634, 438/636, 438/672, 438/687, 438/694, 438/711, 438/717, 438/725, 438/736, 438/740, 438778-781, 438/786, 438788-790, 438/795, 438/798
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/31 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques encapsulating layers H01L21/56; After treatment of these layers; Selection of materials for these layers
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 2221/1031 Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating. The inorganic antireflective coating is vapor deposited and contains atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. At least one interconnect pattern is then formed within the at least one patternable low-k material. Next, the at least one patternable low-k material containing the at least one interconnect pattern is cured.

Claims

1. A method of fabricating an interconnect structure comprising:

providing an inorganic antireflective coating atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La;

depositing at least one patternable low-k material on a surface of said inorganic reflective coating, wherein said at least one patternable low-k material comprises a composition of a functionalized polymer, and a photoacid generator, wherein said functionalized polymer comprises a carbosilane or an oxycarbosilane and contains one or more irradiation/acid sensitive imageable groups;

forming at least one interconnect pattern within said at least one patternable low-k material, said at least one interconnect pattern is formed without utilizing a separate photoresist material; and

curing said at least one patternable low-k material to provide a dielectric material, said dielectric having a dielectric constant of not more than 4.3, and wherein said curing is performed after forming said at least one interconnect pattern into said at least one patternable low-k material.

2. The method of claim 1, wherein said inorganic antireflective coating further comprises at least one of O, N, S, and F.

3. The method of claim 1, wherein said at least one patternable low-k material further comprises a functionalized sacrificial pore generator.

4. The method of claim 1, wherein said curing comprises a thermal cure, an electron beam cure, an UV cure, an ion beam cure, a plasma cure, a microwave cure or any combination thereof.

5. The method of claim 1, wherein said composition further includes a base additive.

6. The method of claim 5, wherein said composition further includes a solvent.

7. The method of claim 1, wherein said forming said at least one interconnect pattern comprises:

pattern wise exposing of said at least one patternable low-k material to form latent images of a desired circuit;

performing a post-exposure baking step; and

developing said latent images into said at least one patternable low-k dielectric material.

8. The method of claim 1, wherein M is Ta, Ni, Hf or La.

9. A method of fabricating a dual-damascene interconnect structure comprising:

providing an inorganic antireflective coating atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La;

depositing a first patternable low-k material on a surface of said inorganic reflective coating, wherein said first patternable low-k material comprises a composition of a functionalized polymer, and a photoacid generator, wherein said functionalized polymer comprises a carbosilane or an oxycarbosilane and contains one or more irradiation/acid sensitive imageable groups;

forming first interconnect patterns within the patternable low-k material without utilizing a separate photoresist material;

providing a second patternable low-k material on the first patternable low-k material including within said first interconnect patterns, wherein said second patternable low-k material comprises a composition of another functionalized polymer, and another photoacid generator, wherein said another functionalized polymer contains one or more irradiation/acid sensitive imageable groups;

forming second interconnect patterns within said second patternable low-k material without utilizing the separate photoresist material; and

curing at least said second patternable low-k material, wherein said curing of at least said second patternable low-k material is performed after forming second interconnect patterns within said second patternable low-k material.

10. The method of claim 9, wherein said inorganic antireflective coating further comprises at least one of O, N, S, and F.

11. The method of claim 9, wherein said first patternable low-k material and the second patternable low-k material are the same.

12. The method of claim 9, wherein said curing at least said second patternable low-k material comprises a thermal cure, an electron beam cure, an UV cure, an ion beam cure, a plasma cure, a microwave cure or any combination thereof.

13. The method of claim 9, wherein said first patternable low-k material is a cured positive or negative-tone material and said second patternable low-k material is a positive or negative-tone material.