Semiconductor device and method for producing same

• US 9,484,304 B2
• Filed: 08/30/2013
• Issued: 11/01/2016
• Est. Priority Date: 09/04/2012
• Status: Active Grant

• Current Assignee: Longitude Licensing Limited (Vector Capital Corporation)
• Original Assignee: Longitude Semiconductor S.à r.l. (Vector Capital Corporation)
• Inventors: Okuda, Kazuhiro, Ishikawa, Shigeo, Amaike, Hiroshi
• Primary Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US14/426,117
• Publication Number:
  US 20150235961A1
• Time in Patent Office: 1,159 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76813 involving a partial via etch
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/5221 Crossover interconnections
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In order to prevent the detachment of a film which is a constituent part of an interlayer-insulating film, and to prevent a decline in the device properties of a semiconductor device, a semiconductor device is provided with an interlayer-insulating film having, in this order, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon oxide film or a carbon-containing silicon oxide (SiOC) film.

Claims

1. A semiconductor device comprising:

an interlayer insulating film having, in this order, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon dioxide film or a carbon-containing silicon oxide (SiOC) film;

a via plug provided in the interlayer insulating film; and

a wiring provided in the interlayer insulating film such that the wiring line is in contact with the via plug.

2. The semiconductor device as claimed in claim 1, wherein the interlayer insulating film has, in this order, a second silicon nitride film, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon dioxide film or a carbon-containing silicon oxide (SiOC) film.

3. The semiconductor device as claimed in claim 1, wherein the wiring line formed from a same material as the via plug.

4. The semiconductor device as claimed in claim 3, wherein a plurality of the interlayer insulating films are laminated such that they lie on top of each other, the via plugs and wiring lines are provided in each of the interlayer insulating films, and the via plugs and wiring lines provided in each of the interlayer insulating films are electrically connected to each other.

5. The semiconductor device as claimed in claim 3, wherein the via plugs and wiring lines are formed from copper.

6. A method of manufacturing a semiconductor device, comprising:

forming an interlayer insulating film having, in this order, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon dioxide film or a carbon-containing silicon oxide (SiOC) film;

forming a via hole and a trench communicating with the via hole in the interlayer insulating film; and

forming a via plug and a wiring line in the via hole and trench, respectively.

7. The method of manufacturing a semiconductor device as claimed in claim 6, further comprising forming the interlayer insulating film having, in this order, a second silicon nitride film, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon dioxide film or a carbon-containing silicon oxide (SiOC) film.

8. The method of manufacturing a semiconductor device as claimed in claim 6, wherein the via plug and the wiring line are formed by filling the via hole and trench with the same conductive material.

9. The method of manufacturing a semiconductor device as claimed in claim 8, wherein a cycle comprising the following (1) to (3) is repeated a plurality of times:

(1) forming the interlayer insulating film, (2) forming the via hole and trench, (3) forming the via plug and wiring line, and, in the (3) in each cycle, the via plugs and wiring lines are formed such that the via plugs and wiring lines in each of the interlayer insulating films are electrically connected to each other.

10. The method of manufacturing a semiconductor device as claimed in claim 8, wherein the conductive material comprises copper.