Semiconductor device having an inter-layer via (ILV), and method of making same
First Claim
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1. A three dimensional semiconductor device comprising:
- a first memory device;
a bit line connected to the first memory device;
a first drain via connected to the bit line and the first memory device;
a second memory device; and
a first via, wherein the first via connects a first source via of the first memory device to a second source via of the second memory device.
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Abstract
A three dimensional semiconductor device includes a first memory device, a second memory device and a via. The via connects the first memory device to the second memory device.
8 Citations
20 Claims
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1. A three dimensional semiconductor device comprising:
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a first memory device; a bit line connected to the first memory device; a first drain via connected to the bit line and the first memory device; a second memory device; and a first via, wherein the first via connects a first source via of the first memory device to a second source via of the second memory device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A stacked semiconductor structure comprising:
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a first memory device, the first memory device comprising; a first transistor device; a bit line, wherein the first transistor device is connected to the bit line by a first drain via; a first word line, wherein the first transistor device is connected to the first word line; a second memory device, the second memory device comprising; a second transistor device; an inter-layer dielectric (ILD), wherein the first memory device and the second memory device are separated by the ILD; and a first via, wherein the first memory device is electrically connected to the second memory device by the first via. - View Dependent Claims (15, 16, 17)
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18. A three dimensional integrated circuit, comprising:
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a first memory device, comprising; a first transistor device; a bit line connected to the first transistor device; a first word line connected to the first transistor device; and a first drain via connected to the bit line and the first transistor device; a second memory device, comprising; a second transistor device; and a second word line connected to the second transistor device; and a first via connected to the first word line and the second word line, wherein the first memory device partially overlaps the second memory device. - View Dependent Claims (19, 20)
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Specification