Display device and method for driving display device

• US 9,484,381 B2
• Filed: 12/22/2014
• Issued: 11/01/2016
• Est. Priority Date: 02/19/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kurokawa, Yoshiyuki, Ikeda, Takayuki, Tamura, Hikaru
• Primary Examiner(s): Patel, Premal
• Application Number:
  US14/579,167
• Publication Number:
  US 20150102207A1
• Time in Patent Office: 680 Days
• US Class Current: 1/1
• CPC Class Codes: G01J 1/18 using comparison with a reference electric value
• CPC Class Codes: G01J 1/42 using electric radiation detectors optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10
• CPC Class Codes: G01J 1/4204 with determination of ambient light solar light G01J2001/4266
• CPC Class Codes: G06F 3/04164 Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
• CPC Class Codes: G06F 3/042 by opto-electronic means
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers

Abstract

A display device includes a pixel which includes a first photosensor portion having a first photodiode for detecting visible light, which is provided together with a display element portion; and a pixel which includes a second photosensor portion having a second photodiode for detecting infrared rays, which is provided together with another display element portion. The second photosensor portion detects infrared rays included in external light, and selects an imaging element and adjusts sensitivity in accordance with the amount of infrared rays detected by the second photosensor portion.

Claims

1. A semiconductor device comprising a first pixel and a second pixel, the first pixel comprising:

a first semiconductor of a first transistor;

a second semiconductor of a second transistor;

an insulating film over the first semiconductor and the second semiconductor;

a first photoelectric conversion element comprising a third semiconductor over the insulating film, the first photoelectric conversion element electrically connected to the first transistor; and

a first element over the insulating film, the first element electrically connected to the second transistor; and

the second pixel comprising;

a fourth semiconductor of a third transistor;

a fifth semiconductor of a fourth transistor;

the insulating film over the fourth semiconductor and the fifth semiconductor;

a second photoelectric conversion element comprising a sixth semiconductor over the insulating film, the second photoelectric conversion element electrically connected to the third transistor; and

a second element over the insulating film, the second element electrically connected to the fourth transistor,

wherein the first photoelectric conversion element is configured to detect visible light,

wherein a sensitivity of the first photoelectric conversion element is adjustable, and

wherein the second photoelectric conversion element is configured to detect an infrared ray.

2. The semiconductor device according to claim 1, wherein the first photoelectric conversion element is a PIN-type photodiode in which amorphous silicon is used for an i-type semiconductor layer.

3. The semiconductor device according to claim 1, wherein the second photoelectric conversion element is a PIN-type photodiode in which crystalline silicon is used for an i-type semiconductor layer.

4. The semiconductor device according to claim 1, wherein the second photoelectric conversion element is provided with a filter which transmits infrared rays and absorbs visible light.

5. The semiconductor device according to claim 1, wherein each of the first element and the second element is a liquid crystal element.

6. The semiconductor device according to claim 1, wherein each of the first element and the second element is a light-emitting element.

7. An electronic device comprising the semiconductor device according to claim 1.

8. The semiconductor device according to claim 1, wherein the third semiconductor is a different material from the first semiconductor and the second semiconductor, and

wherein the sixth semiconductor is a different material from the fourth semiconductor and the fifth semiconductor.

9. The semiconductor device according to claim 1,

wherein each of the first semiconductor, the second semiconductor, the fourth semiconductor and the fifth semiconductor comprises an oxide semiconductor.

10. The semiconductor device according to claim 1,

wherein the first photoelectric conversion element overlaps with the first transistor.