Semiconductor device with a resistance element in a trench

• US 9,484,444 B2
• Filed: 04/28/2008
• Issued: 11/01/2016
• Est. Priority Date: 05/25/2007
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Kusunoki, Shigeru, Mochizuki, Koichi, Kawakami, Minoru
• Primary Examiner(s): CHEN, DAVID Z
• Application Number:
  US12/110,621
• Publication Number:
  US 20080290407A1
• Time in Patent Office: 3,109 Days
• Field of Search: 257/E29.201, 257/E29.027, 257/154, 257/245, 257/350, 1E2/920.1
• US Class Current: 1/1
• CPC Class Codes: H01L 27/0611 integrated circuits having a two-dimensional layout of components without a common active region
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/4232 with insulated gate
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device has a semiconductor substrate, an insulating film, a semiconductor element and a resistance element. The semiconductor substrate has a first trench. The insulating film covers an inner surface of the first trench. The semiconductor element has an electrode. The resistance element is electrically connected to the electrode to form a resistance to a current flowing through the electrode, and is arranged in the first trench with the insulating film therebetween. Thereby, the semiconductor device can have a resistance element that has a small footprint and can pass a large current with high reliability.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a first trench;

an insulating film covering an inner surface of said first trench that includes four sidewall surfaces joined by a bottom surface;

a semiconductor element having a gate electrode;

a gate signal source arranged separately from said gate electrode;

a resistance element including a semiconductor layer and first and second metal layers arranged in said first trench with said insulating film therebetween, said resistance element having one end and another end, said one end being electrically connected to said gate signal source via said first metal layer, said another end being electrically connected to said gate electrode via said second metal layer, said resistance element forming a resistance between said gate signal source and said gate electrode, said first and second metal layers only being electrically connected to each other via said semiconductor layer, wherein

said first and second metal layers are separately connected to different portions of said semiconductor layer,

said semiconductor layer having a part arranged in said first trench extending between the first and second metal layers, said part being composed of a material of a single first conductivity type and the semiconductor substrate includes a first region of a single second conductivity type and all surfaces of the inner surface of the first trench are entirely formed in said first region of the single second conductivity type of the semiconductor substrate;

the insulating film has an entire surface in contact with the first region of the single second conductivity type, and

a signal to be provided to the gate electrode via the resistance element is input to the gate signal source.

2. The semiconductor device according to claim 1, wherein

an interlayer insulating film has a contact hole on an opening side of said first trench of said resistance element, and

one of the different portions of said semiconductor layer provided at a position opposed to said contact hole has a width larger than a width of the part of said semiconductor layer opposed to said interlayer insulating film.

3. The semiconductor device according to claim 2, wherein

said portion having the larger width includes a portion having a lower resistivity than the part.

4. The semiconductor device according to claim 2, wherein,

said semiconductor element has a gate insulating film,

said semiconductor substrate has a second trench,

said gate insulating film covers an inner surface of said second trench,

said gate electrode is arranged in said second trench with said gate insulating film therebetween, and

said gate electrode has a width larger than the width of the part of said semiconductor layer opposed to said interlayer insulating film.

5. The semiconductor device according to claim 4, wherein

said gate electrode has a portion having a lower resistivity than the part.

6. The semiconductor device according to claim 1, wherein all current that passes between said gate signal source and said gate electrode passes via the resistance element.

7. The semiconductor device according to claim 1, further comprising:

an interlayer insulating film covering said resistance element and arranged between said first and second metal layers.

8. The semiconductor device according to claim 1, wherein an interlayer insulating film contacts said resistance element, said gate signal source, and said gate electrode.

9. The semiconductor device according to claim 1, wherein said resistance element allows current to flow in both directions between the one and another ends of said resistance element throughout a same voltage range.

10. The semiconductor device according to claim 1, wherein said gate signal source provides a gate signal that is designated for the gate electrode.

11. The semiconductor device according to claim 1, wherein said gate signal source is a gate pad.

12. The semiconductor device according to claim 1, wherein the depth of said first trench is less than a distance between two opposing sidewalls of said first trench.

13. The semiconductor device according to claim 1, wherein the semiconductor substrate includes a second region of the single first conductivity type.