Integrated circuit structure with substrate isolation and un-doped channel
First Claim
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1. A semiconductor device comprising:
- a fin structure formed on a substrate;
a gate stack formed over the fin structure;
source/drain regions over the substrate and disposed on opposing sides of the gate stack;
a channel region defined in the fin structure and underlying the gate stack, wherein the channel region is un-doped;
a buried isolation layer disposed vertically between the channel region and the substrate, wherein the buried isolation layer includes a compound semiconductor oxide, and wherein the buried isolation layer has a first thickness within the channel region and extends to the source/drain regions with a second thickness less than the first thickness; and
a semiconductor material layer disposed on the buried isolation layer within the source/drain regions.
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Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin structure formed on a substrate; a gate stack formed over the fin structure; source/drain regions over the substrate and disposed on opposing sides of the gate stack; a channel region defined in the fin structure and underlying the gate stack, wherein the channel region is un-doped; and a buried isolation layer disposed vertically between the channel region and the substrate, wherein the buried isolation layer includes a compound semiconductor oxide.
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20 Claims
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1. A semiconductor device comprising:
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a fin structure formed on a substrate; a gate stack formed over the fin structure; source/drain regions over the substrate and disposed on opposing sides of the gate stack; a channel region defined in the fin structure and underlying the gate stack, wherein the channel region is un-doped; a buried isolation layer disposed vertically between the channel region and the substrate, wherein the buried isolation layer includes a compound semiconductor oxide, and wherein the buried isolation layer has a first thickness within the channel region and extends to the source/drain regions with a second thickness less than the first thickness; and a semiconductor material layer disposed on the buried isolation layer within the source/drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a fin structure formed on a substrate; a gate stack formed over the fin structure; source/drain regions over the substrate and disposed on opposing sides of the gate stack; a channel region defined in the fin structure and underlying the gate stack; a buried isolation layer of a compound semiconductor oxide, disposed vertically between the channel region and the substrate, extending to the source/drain regions, wherein the buried isolation layer includes a first thickness within the channel region and a second thickness within the source/drain regions, the second thickness being less than the first thickness; and a compound semiconductor layer vertically disposed between the source/drain regions and the buried isolation layer, wherein the buried isolation layer includes silicon germanium oxide and the compound semiconductor layer includes silicon germanium. - View Dependent Claims (10, 11, 12)
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13. A semiconductor device comprising:
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a fin structure formed on a substrate; a gate stack formed over the fin structure; source/drain regions over the substrate and disposed on opposing sides of the gate stack; a channel region defined in the fin structure and underlying the gate stack; a buried isolation layer, disposed vertically between the channel region and the substrate, extending to the source/drain regions; and a semiconductor layer vertically disposed between the source/drain regions and the buried isolation layer, wherein the semiconductor layer includes a material different from that of the channel region, and wherein the buried isolation layer includes oxygen and the material contained in the semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification