Surface treatment of a semiconductor light emitting device
First Claim
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1. A semiconductor light-emitting device, comprising:
- a semiconductor structure comprising a light-emitting region, wherein the semiconductor structure comprises;
an n-type region;
a p-type region;
the light-emitting region between the n- and the p-type regions;
an n-contact disposed on the n-type region; and
a p-contact disposed on the p-type region, wherein the n-contact is insulated by a gap from the active region, the p-type region, and the p-contact,wherein a surface of the semiconductor structure comprises flattened peaks.
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Abstract
A semiconductor light-emitting device includes a semiconductor structure having a light-emitting region. A surface of the semiconductor structure has flattened peaks.
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Citations
8 Claims
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1. A semiconductor light-emitting device, comprising:
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a semiconductor structure comprising a light-emitting region, wherein the semiconductor structure comprises; an n-type region; a p-type region; the light-emitting region between the n- and the p-type regions; an n-contact disposed on the n-type region; and a p-contact disposed on the p-type region, wherein the n-contact is insulated by a gap from the active region, the p-type region, and the p-contact, wherein a surface of the semiconductor structure comprises flattened peaks. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light-emitting device, comprising:
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a semiconductor structure, comprising; an n-type region, wherein a surface of the n-type region comprises flattened peaks; a p-type region; a light-emitting region between the n- and the p-type regions; an n-contact to the n-type region; and a p-contact to the p-type region wherein the n-contact is insulated by a gap from the active region, the p-type region, and the p-contact; a wavelength converting material over the surface of the n-type region; and a mount supporting the semiconductor region.
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Specification