Transparent ohmic contacts on light emitting diodes with carrier substrates
First Claim
Patent Images
1. A light emitting diode comprising:
- an active structure comprising p-type and n-type epitaxial layers of Group III nitride, wherein the active structure comprises a first lenticular surface;
an electrically conductive carrier substrate;
an electrically conductive bonding system joining said active structure to said electrically conductive carrier substrate;
a first transparent ohmic contact to said active structure, said first transparent ohmic contact between said active structure and said electrically conductive carrier substrate;
a second transparent ohmic contact in direct contact with said active structure, without any layer in between said active structure and said second transparent ohmic contact, said active structure between said second transparent ohmic contact and said electrically conductive carrier substrate; and
a third ohmic contact to said electrically conductive carrier substrate, said electrically conductive carrier substrate between said third ohmic contact and said active structure,wherein said second transparent ohmic contact comprises a second lenticular surface opposite the first lenticular surface of the active structure.
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Abstract
A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive bonding system joins the active structure to the conductive carrier substrate. A first transparent ohmic contact is on the active structure adjacent the conductive carrier substrate, a second transparent ohmic contact is on the active structure opposite the conductive carrier substrate, and a third ohmic contact is on the conductive carrier substrate opposite from the active structure.
122 Citations
46 Claims
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1. A light emitting diode comprising:
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an active structure comprising p-type and n-type epitaxial layers of Group III nitride, wherein the active structure comprises a first lenticular surface; an electrically conductive carrier substrate; an electrically conductive bonding system joining said active structure to said electrically conductive carrier substrate; a first transparent ohmic contact to said active structure, said first transparent ohmic contact between said active structure and said electrically conductive carrier substrate; a second transparent ohmic contact in direct contact with said active structure, without any layer in between said active structure and said second transparent ohmic contact, said active structure between said second transparent ohmic contact and said electrically conductive carrier substrate; and a third ohmic contact to said electrically conductive carrier substrate, said electrically conductive carrier substrate between said third ohmic contact and said active structure, wherein said second transparent ohmic contact comprises a second lenticular surface opposite the first lenticular surface of the active structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 31)
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16. A light emitting diode comprising:
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an electrically conductive carrier substrate; a p-type epitaxial layer on said electrically conductive carrier substrate; a first transparent ohmic contact between said p-type layer and said electrically conductive carrier substrate; an n-type epitaxial layer on said p-type layer; a lenticular surface on said n-type epitaxial layer; a second transparent ohmic contact covering said n-type epitaxial layer and said lenticular surface; said second transparent ohmic contact forming a lenticular surface opposite said n-type epitaxial layer; and a third ohmic contact to said electrically conductive carrier substrate opposite from said epitaxial layers wherein said first transparent ohmic contact comprises a second lenticular surface opposite the first lenticular surface of the active structure. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 32)
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29. A light emitting diode comprising:
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an active structure comprising p-type and n-type epitaxial layers of Group III nitride, the active structure comprising a lenticular surface; an electrically conductive carrier substrate; an electrically conductive bonding system joining said active structure to said electrically conductive carrier substrate; a first transparent ohmic contact to said active structure; a second transparent ohmic contact in direct contact with said lenticular surface of said active structure, without any layer in between said active structure and said second transparent ohmic contact, said active structure between said second transparent ohmic contact and said electrically conductive carrier substrate, wherein said second transparent ohmic contact comprises a progressive refractive index; and a third ohmic contact to said electrically conductive carrier substrate, said electrically conductive carrier substrate between said third ohmic contact and said active structure. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40)
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30. In a light emitting diode that includes an electrically conductive carrier substrate and a Group III nitride active portion, the improvement comprising:
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an n-type layer of Group III nitride including a lenticular surface; a transparent metal ohmic contact in direct contact with said lenticular surface, without any layer in between said lenticular surface and said transparent metal ohmic contact, in which the transparent metal ohmic contact comprises a progressive refractive index; and an electrically conductive bonding system between the electrically conductive carrier substrate and the Group III nitride active portion. - View Dependent Claims (41, 42, 43, 44, 45, 46)
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Specification