Semiconductor light emitting device and method of manufacturing the same

• US 9,484,500 B2
• Filed: 06/10/2014
• Issued: 11/01/2016
• Est. Priority Date: 06/17/2013
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Ki Seok, Lee, Sang Seok, Lee, Su Yeol, Lim, Chan Mook
• Primary Examiner(s): Tornow, Mark
• Assistant Examiner(s): RAMPERSAUD, PRIYA M
• Application Number:
  US14/300,642
• Publication Number:
  US 20140367720A1
• Time in Patent Office: 875 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer;

a first electrode disposed on the first conductivity type semiconductor layer; and

a second electrode having a pad region and a finger region extending from the pad region, wherein the second electrode comprises;

a transparent electrode part disposed on the second conductivity type semiconductor layer and having an opening provided in the pad region and the finger region;

a reflective part disposed on the second conductivity type semiconductor layer in the opening of the transparent electrode part in the pad region and the finger region, and spaced apart from the transparent electrode part within the opening; and

a bonding part comprising a plurality of bonding finger parts disposed on the reflective part in the finger region and spaced apart from each other, and a bonding pad part disposed on the reflective part in the pad region,

wherein the bonding pad part covers the opening of the transparent electrode part in the pad region and extends onto the transparent electrode part, and the bonding pad part is interposed between the transparent electrode part and the reflective part within the opening of the transparent electrode part in the pad region.

2. The semiconductor light emitting device of claim 1, wherein the plurality of bonding finger parts extend across the opening of the transparent electrode part in the finger region and onto the transparent electrode part, and the plurality of bonding finger parts are interposed between the transparent electrode part and the reflective part within the opening in the finger region.

3. The semiconductor light emitting device of claim 1, wherein each bonding finger part of the plurality of bonding finger parts is spaced apart from an adjacent bonding finger part of the plurality of bonding finger parts by a predetermined distance.

4. The semiconductor light emitting device of claim 1, wherein the bonding part further comprises a connection part that extends from the bonding pad part and connects the bonding finger parts.

5. The semiconductor light emitting device of claim 1, wherein the bonding finger parts have a first width in a first direction in which the finger region is extended from the pad region, and a second width in a second direction perpendicular to the first direction, and

wherein the second width is greater than the first width.

6. The semiconductor light emitting device of claim 5, wherein the bonding pad part has an area that is greater than an area of each of the bonding finger parts, and has a circular shape having a third width that is greater than the second width of the bonding finger parts.

7. The semiconductor light emitting device of claim 1, further comprising a current blocking layer interposed between the reflective part and the second conductivity type semiconductor layer within the opening in the pad region.

8. The semiconductor light emitting device of claim 1, wherein the first electrode comprises:

a first reflective part disposed on the first conductivity type semiconductor layer; and

a first bonding part disposed on the first reflective part.

9. The semiconductor light emitting device of claim 1, wherein the first electrode has a first pad region and a first finger region extending from the first pad region, and

the first electrode comprises:

a first reflective part disposed on the first conductivity type semiconductor layer, the first reflective part comprising a reflective pad part provided in the first pad region and a plurality of reflective finger parts provided in the first finger region and spaced apart from each other, and

a first bonding part disposed on the first reflective part in the first pad region and the first finger region.

10. The semiconductor light emitting device of claim 9, wherein the first bonding part is disposed on the first conductivity type semiconductor layer between the plurality of reflective finger parts.

11. The semiconductor light emitting device of claim 1 further comprising a light diffusion layer disposed on the first conductivity type semiconductor layer and exposing portions the first conductivity type semiconductor layer,

wherein the first electrode comprises:

a first reflective part disposed on the light diffusion layer and the exposed portions of the first conductivity type semiconductor layer; and

a first bonding part disposed on the first reflective part.

12. The semiconductor light emitting device of claim 1, wherein the first electrode has a first pad region and a plurality of first finger regions extending from the first pad region,

wherein the finger region of the second electrode comprises a plurality of second finger regions extending from the pad region of the second electrode, and

the first finger regions of the first electrode and the second finger regions of the second electrode are alternately disposed to form a current spreading net.