Optoelectronic semiconductor component
First Claim
1. An optoelectronic semiconductor component, comprisinga carrier element, on which an optoelectronic semiconductor chip having at least one active layer is arranged,wherein the active layer is designed to emit or to receive light during operation and the semiconductor chip is covered with a protective layer comprising parylene,wherein the carrier element has a mounting surface facing away from the optoelectronic semiconductor chip,wherein the semiconductor chip is laterally surrounded by a potting material, and the protective layer completely covers all surfaces of the semiconductor component apart from the mounting surface and forms an outer layer of the semiconductor component,wherein the carrier element has at least two electrical connection elements which are embodied as plated-through holes and which extend from the mounting surface facing away from the semiconductor chip through the carrier element as far as that side of the carrier element which faces the semiconductor chip,wherein the optoelectronic semiconductor component further comprises a wavelength conversion layer,wherein the semiconductor chip and the wavelength conversion layer are surrounded by a potting material,wherein electrical contact with a top side of the semiconductor chip remote from the carrier element is realized through an opening in the wavelength conversion layer, an electrical contact structure in the form of a metal film is arranged in the opening,wherein a corresponding opening containing the electrical contact structure is provided in the potting material so that the electrical contact structure partially runs on top faces of the wavelength conversion layer and of the potting material remote from the carrier element, andwherein the electrical contact structure is in contact with one of the plated-through holes that is located beside the semiconductor chip when seen on the top side.
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Accused Products
Abstract
The invention relates to an optoelectronic semiconductor component, which has a carrier element (1), on which an optoelectronic semiconductor chip (2) having at least one active layer is arranged, wherein the active layer is designed to emit or receive light during operation and wherein the semiconductor chip (2) is covered with a protective layer (3) that contains poly-para-xylenes.
12 Citations
10 Claims
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1. An optoelectronic semiconductor component, comprising
a carrier element, on which an optoelectronic semiconductor chip having at least one active layer is arranged, wherein the active layer is designed to emit or to receive light during operation and the semiconductor chip is covered with a protective layer comprising parylene, wherein the carrier element has a mounting surface facing away from the optoelectronic semiconductor chip, wherein the semiconductor chip is laterally surrounded by a potting material, and the protective layer completely covers all surfaces of the semiconductor component apart from the mounting surface and forms an outer layer of the semiconductor component, wherein the carrier element has at least two electrical connection elements which are embodied as plated-through holes and which extend from the mounting surface facing away from the semiconductor chip through the carrier element as far as that side of the carrier element which faces the semiconductor chip, wherein the optoelectronic semiconductor component further comprises a wavelength conversion layer, wherein the semiconductor chip and the wavelength conversion layer are surrounded by a potting material, wherein electrical contact with a top side of the semiconductor chip remote from the carrier element is realized through an opening in the wavelength conversion layer, an electrical contact structure in the form of a metal film is arranged in the opening, wherein a corresponding opening containing the electrical contact structure is provided in the potting material so that the electrical contact structure partially runs on top faces of the wavelength conversion layer and of the potting material remote from the carrier element, and wherein the electrical contact structure is in contact with one of the plated-through holes that is located beside the semiconductor chip when seen on the top side.
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10. An optoelectronic semiconductor component, comprising
a carrier element, on which an optoelectronic semiconductor chip having at least one active layer is arranged, wherein the active layer is designed to emit or to receive light during operation and wherein the semiconductor chip is covered with a protective layer comprising parylene, wherein the carrier element has a mounting surface facing away from the optoelectronic semiconductor chip, the semiconductor chip is laterally surrounded by a potting material, and the protective layer covers all surfaces of the semiconductor component apart from the mounting surface and forms an outer layer of the semiconductor component, and wherein the carrier element has at least two electrical connection elements which are embodied as plated-through holes and which extend from the mounting surface facing away from the semiconductor chip through the carrier element as far as that side of the carrier element which faces the semiconductor chip.
Specification