×

Memory element and memory apparatus

  • US 9,484,528 B2
  • Filed: 04/11/2016
  • Issued: 11/01/2016
  • Est. Priority Date: 11/30/2011
  • Status: Active Grant
First Claim
Patent Images

1. A memory element, comprising a layered structure comprising:

  • a memory layer including;

    a first ferromagnetic layer,a bonding layer laminated on the first ferromagnetic layer, anda second ferromagnetic layer laminated on the bonding layer;

    a fixed-magnetization layer having a fixed magnetization direction perpendicular to a film face of the fixed-magnetization layer; and

    an intermediate layer provided between the memory layer and the fixed-magnetization layer,wherein a magnetization direction in an equilibrium state of the first ferromagnetic layer and a magnetization direction in an equilibrium state of the second ferromagnetic layer are respectively at a first and second predetermined angle relative to the fixed magnetization direction, wherein the first and second predetermined angles are not parallel or antiparallel to the fixed magnetization direction and are not parallel to one another.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×