Memory element and memory apparatus
First Claim
1. A memory element, comprising a layered structure comprising:
- a memory layer including;
a first ferromagnetic layer,a bonding layer laminated on the first ferromagnetic layer, anda second ferromagnetic layer laminated on the bonding layer;
a fixed-magnetization layer having a fixed magnetization direction perpendicular to a film face of the fixed-magnetization layer; and
an intermediate layer provided between the memory layer and the fixed-magnetization layer,wherein a magnetization direction in an equilibrium state of the first ferromagnetic layer and a magnetization direction in an equilibrium state of the second ferromagnetic layer are respectively at a first and second predetermined angle relative to the fixed magnetization direction, wherein the first and second predetermined angles are not parallel or antiparallel to the fixed magnetization direction and are not parallel to one another.
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Abstract
A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.
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Citations
20 Claims
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1. A memory element, comprising a layered structure comprising:
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a memory layer including; a first ferromagnetic layer, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer; a fixed-magnetization layer having a fixed magnetization direction perpendicular to a film face of the fixed-magnetization layer; and an intermediate layer provided between the memory layer and the fixed-magnetization layer, wherein a magnetization direction in an equilibrium state of the first ferromagnetic layer and a magnetization direction in an equilibrium state of the second ferromagnetic layer are respectively at a first and second predetermined angle relative to the fixed magnetization direction, wherein the first and second predetermined angles are not parallel or antiparallel to the fixed magnetization direction and are not parallel to one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A memory apparatus, comprising:
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a memory element having a layered structure including; a memory layer including; a first ferromagnetic layer, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer; a fixed-magnetization layer having a fixed magnetization direction perpendicular to a film face of the fixed-magnetization layer; and an intermediate layer provided between the memory layer and the fixed-magnetization layer, wherein a magnetization direction in an equilibrium state of the first ferromagnetic layer and a magnetization direction in an equilibrium state of the second ferromagnetic layer are respectively at a first and second predetermined angle relative to the fixed magnetization direction, wherein the first and second predetermined angles are not parallel or antiparallel to the fixed magnetization direction and are not parallel to one another. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification