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Device for controlling at least one transistor

  • US 9,484,907 B2
  • Filed: 07/11/2013
  • Issued: 11/01/2016
  • Est. Priority Date: 07/13/2012
  • Status: Active Grant
First Claim
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1. A device for controlling at least one transistor, comprising:

  • said at least one transistor comprising a control electrode and two other electrodes;

    a main control circuit connected to the control electrode of the transistor and configured so as to control the state of the transistor in a main operating mode;

    an auxiliary control circuit configured to inject, in an auxiliary operating mode, an auxiliary current opposed to the current flowing between the main control circuit and the control electrode of the transistor, the auxiliary control circuit comprising;

    a first resistance in series between one of the other electrodes of the transistor and a transistor forming part of the element for detecting the presence of the predetermined condition, anda second resistance in series between said transistor forming part of the element for detecting the presence of the predetermined condition and a voltage source, the terminal of this second resistance connected to the transistor of the element for detecting the presence of the predetermined condition being additionally connected to the control electrode of a transistor through which the auxiliary current flows when the latter is injected, wherein the locking is achieved by the choice of the value of the ratio between the first and the second resistance;

    a power amplifier circuit of the “

    push-pull”

    type, positioned between the main control circuit and the control electrode of the transistor, the auxiliary control circuit being arranged so that the injected current flows through the power amplifier circuit when the auxiliary operating mode is used under presence of a predetermined condition relating to a value of a time derivative of a current flowing between the electrodes of the transistor other than the control electrode; and

    an element for detecting the presence of the predetermined condition by measuring a voltage at the terminals of a parasitic inductance of one of the electrodes other than the control electrode of the transistor.

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