Structure for circuit board used in electronic devices and method for manufacturing the same

• US 9,485,877 B2
• Filed: 09/28/2010
• Issued: 11/01/2016
• Est. Priority Date: 09/28/2009
• Status: Active Grant

• Current Assignee: Kyocera Corporation
• Original Assignee: Kyocera Corporation
• Inventors: Hayashi, Katsura
• Primary Examiner(s): RUMMEL, IAN A
• Application Number:
  US13/498,764
• Publication Number:
  US 20120189826A1
• Time in Patent Office: 2,226 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H05K 2201/0175 Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
• CPC Class Codes: H05K 2201/0195 Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
• CPC Class Codes: H05K 2201/0209 Inorganic, non-metallic particles
• CPC Class Codes: H05K 2201/0355 Metal foils
• CPC Class Codes: H05K 2203/1152 Replicating the surface structure of a sacrificial layer, e.g. for roughening
• CPC Class Codes: H05K 3/4602 characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
• CPC Class Codes: H05K 3/4655 by using a laminate characterized by the insulating layer general-purpose insulating materials H05K1/03, H05K3/4673
• CPC Class Codes: H05K 3/4673 Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer similar methods for protective coatings H05K3/28
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree

Abstract

A structure for which the electrical reliability is improved is provided. A structure in accordance with one embodiment includes an inorganic insulating layer including amorphous silicon oxide and having an elastic modulus which is 45 GPa or less. A method for manufacturing a structure in accordance with one embodiment includes applying an inorganic insulating sol including inorganic insulating particles composed of amorphous silicon oxide, and forming an inorganic insulating layer including amorphous silicon oxide and having an elastic modulus which is 45 GPa or less by heating the inorganic insulating particles at a temperature lower than a crystallization onset temperature of silicon oxide to each other.

Claims

1. A structure, comprising:

an inorganic insulating layer that includes first inorganic particles including amorphous silicon oxide and second inorganic insulating particles including amorphous silicon oxide and has an elastic modulus which is 45 GPa or less,

the first inorganic insulating particles being connected to each other,

the second inorganic insulating particles being connected to each other via the first inorganic insulating particles and having a larger particle diameter than a particle diameter of the first inorganic insulating particles,

wherein an elastic modulus of the first inorganic insulating particles is smaller than an elastic modulus of the second inorganic insulating particles.

2. The structure according to claim 1,

wherein a peak value of Raman scattering intensity within a Raman shift range of 600 cm−

1 or more and 620 cm−

1 or less in the inorganic insulating layer is smaller than a peak value of Raman scattering intensity within a Raman shift range of 600 cm−

1 or more and 620 cm−

1 or less in the second inorganic insulating particles.

3. The structure according to claim 1,

wherein a proportion of three-membered ring structure to multi-membered ring structure of the first inorganic insulating particles is smaller than a proportion of three-membered ring structure to multi-membered ring structure of the second inorganic insulating particles.

4. The structure according to claim 1,

wherein the particle diameter of the first inorganic insulating particles is within a range of 3 nm or more and 110 nm or less.

5. The structure according to claim 4,

wherein the particle diameter of the second inorganic insulating particles is within a range of 0.5 μ

m or more and 5 μ

m or less.

6. The structure according to claim 1,

further comprising a first resin layer disposed on the inorganic insulating layer.

7. The structure according to claim 6,

further comprising a conductive layer disposed on a part of the first resin layer.

8. The structure according to claim 7,

further comprising a second resin layer disposed on a region of the first resin layer where the conductive layer is not disposed,

wherein one main surface of the conductive layer is in contact with the first resin layer;

a side surface and other main surface of the conductive layer are in contact with the second resin layer,

a thickness of the first resin layer is smaller than a thickness of the second resin layer, and

an elastic modulus of the first resin layer is smaller than an elastic modulus of the second resin layer.

9. The structure according to claim 8,

wherein the inorganic insulating layer is plural and laminated each other, and

adjacent inorganic insulating layers are connected to each other via the first and second resin layers.

10. The structure according to claim 1,

wherein an elastic modulus of the inorganic insulating layer is 10 GPa or more.

11. The structure according to claim 10,

wherein a hardness of the inorganic insulating layer is within a range of 0.5 GPa or more and 4 GPa or less.

12. A structure, comprising:

an inorganic insulating layer that includes first inorganic particles including amorphous silicon oxide and second inorganic insulating particles including amorphous silicon oxide and has an elastic modulus which is 45 GPa or less,

the first inorganic insulating particles being connected to each other,

the second inorganic insulating particles being connected to each other via the first inorganic insulating particles and having a larger particle diameter than a particle diameter of the first inorganic insulating particles,

wherein a proportion of three-membered ring structure to multi-membered ring structure of the first inorganic insulating particles is smaller than a proportion of three-membered ring structure to multi-membered ring structure of the second inorganic insulating particles.