Methods of patterning a conductor on a substrate

• US 9,487,040 B2
• Filed: 12/04/2014
• Issued: 11/08/2016
• Est. Priority Date: 02/28/2008
• Status: Active Grant

• Current Assignee: 3M Innovative Properties Company (3M Company)
• Original Assignee: 3M Innovative Properties Company (3M Company)
• Inventors: Zu, Lijun, Frey, Matthew H.
• Primary Examiner(s): Sheikh, Humera
• Assistant Examiner(s): Dumbris, Seth
• Application Number:
  US14/560,748
• Publication Number:
  US 20150086757A1
• Time in Patent Office: 705 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B41M 5/52 Macromolecular coatings
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: C23F 1/30 for etching other metallic material
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 2203/04112 Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
• CPC Class Codes: G06F 3/041 Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• CPC Class Codes: G06F 3/0445 using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
• CPC Class Codes: H05K 1/0296 Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295 H05K1/11 takes precedence; lay-out adapted to mounted component configuration H05K1/18
• CPC Class Codes: H05K 1/032 consisting of one material
• CPC Class Codes: H05K 2201/0108 Transparent
• CPC Class Codes: H05K 2201/0133 Elastomeric or compliant polymer elastomeric conductor H05K2201/0314
• CPC Class Codes: H05K 2203/0108 Male die used for patterning, punching or transferring
• CPC Class Codes: H05K 2203/0537 Transfer of pre-fabricated insulating pattern
• CPC Class Codes: H05K 3/0079 characterised by the method of application or removal of the mask H05K3/0091 takes precedence
• CPC Class Codes: H05K 3/061 Etching masks
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

A method of patterning a conductor on a substrate includes providing an inked elastomeric stamp inked with self-assembled monolayer-forming molecules and having a relief pattern with raised features. Then the raised features of the inked stamp contact a metal-coated visible light transparent substrate. Then the metal is etched to form an electrically conductive micropattern corresponding to the raised features of the inked stamp on the visible light transparent substrate.

Claims

1. A two-dimensional self-assembled monolayer (SAM) pattern, comprising:

a low density region measuring at least 5 square millimeters and comprising a two-dimensional mesh of first SAM features having an average area density value of first SAM features between 0.5% to 20%, wherein the first SAM features have a width value between 0.5 to 25 micrometers, a distance value between adjacent first SAM features of less than 1 millimeter; and

a second SAM feature measuring at least 50 micrometers in width, wherein for a junction formed between the first SAM features and the second SAM feature, the first SAM features width is widened by tapering before making contact to the second SAM feature.

2. The two-dimensional self-assembled monolayer (SAM) pattern of claim 1 disposed on a patterned metal layer.

3. The two-dimensional self-assembled monolayer (SAM) pattern of claim 1, wherein the two-dimensional mesh of first SAM features has an average area density value between 0.5% to 10%.

4. The two-dimensional self-assembled monolayer (SAM) pattern of claim 1, wherein the two-dimensional mesh of first SAM features has an average area density value between 0.5% to 5%.

5. The two-dimensional self-assembled monolayer (SAM) pattern of claim 1, wherein the SAM comprises octadecylthiol.

6. The two-dimensional self-assembled monolayer (SAM) pattern of claim 1, wherein the low density region has a uniform average area density value of first SAM features.