Selective ECC refresh for on die buffered non-volatile memory
First Claim
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1. A method comprising:
- determining whether to perform an error correcting code (ECC) refresh for data to be copied from a first set of non-volatile memory cells to a second set of non-volatile memory cells based on one or more attributes associated with the data, the second set of non-volatile memory cells configured to store more bits per cell than the first set of non-volatile memory cells;
adjusting one or more read voltage thresholds for the first set of non-volatile memory cells in response to determining to perform the ECC refresh; and
reading the data from the first set of non-volatile memory cells using the adjusted one or more read voltage thresholds for copying the data to the second set of non-volatile memory cells.
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Abstract
Apparatuses, systems, methods, and computer program products are disclosed for on die buffered non-volatile memory management. A method includes storing data in a first set of non-volatile memory cells. A method includes determining whether to perform an error-correcting code (ECC) refresh for data to be copied from a first set of non-volatile memory cells to a second set of non-volatile memory cells based on one or more attributes associated with the data. A method includes storing data in a second set of non-volatile storage cells representing data using more storage cells per cell than a first set of non-volatile storage cells.
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Citations
20 Claims
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1. A method comprising:
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determining whether to perform an error correcting code (ECC) refresh for data to be copied from a first set of non-volatile memory cells to a second set of non-volatile memory cells based on one or more attributes associated with the data, the second set of non-volatile memory cells configured to store more bits per cell than the first set of non-volatile memory cells; adjusting one or more read voltage thresholds for the first set of non-volatile memory cells in response to determining to perform the ECC refresh; and reading the data from the first set of non-volatile memory cells using the adjusted one or more read voltage thresholds for copying the data to the second set of non-volatile memory cells. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An apparatus comprising:
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a buffer module configured to store data in a first set of non-volatile storage cells; a refresh module configured to determine whether to perform an error-correcting code (ECC) refresh for the data for storing the data in a second set of non-volatile storage cells based on one or more data factors; and a copyback module configured to store the data in the second set of non-volatile storage cells, the second set of non-volatile storage cells representing data using more storage states per cell than the first set of non-volatile storage cells. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A system comprising:
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a non-volatile memory element comprising a set of single level cell (SLC) non-volatile memory cells and a set of triple level cell (TLC) non-volatile memory cells; and a controller that buffers data in the set of SLC non-volatile memory cells and copies the data to the set of TLC non-volatile memory cells, the controller selectively determining whether to perform an error-correcting code (ECC) refresh for storing the data in the TLC non-volatile memory cells based on one or more data factors. - View Dependent Claims (20)
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Specification