Seed layer for multilayer magnetic materials

• US 9,490,054 B2
• Filed: 10/11/2012
• Issued: 11/08/2016
• Est. Priority Date: 10/11/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Headway Technologies Incorporated (TDK Corporation)
• Inventors: Tong, Ru-Ying, Jan, Guenole
• Primary Examiner(s): Ingham, John C
• Assistant Examiner(s): HARGROVE, FREDERICK B
• Application Number:
  US13/649,327
• Publication Number:
  US 20140103469A1
• Time in Patent Office: 1,489 Days
• Field of Search: 257420-421, 365/148, 365/173, 360/324.2
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/123 having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
• CPC Class Codes: H01F 10/30 characterised by the composition of the intermediate layers , e.g. seed, buffer, template, diffusion preventing, cap layers H01F10/06 and H01F10/32 take precedence
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 41/307 insulating or semiconductive spacer
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof may be inserted between the seed layer and magnetic layer. The magnetic element has thermal stability to at least 400° C.

Claims

1. A magnetic element, comprising:

(a) a first seed layer consisting of one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru;

(b) a second seed layer contacting a top surface of the first seed layer and consisting of one or more of Mg, Sr, MgZr, and MgNb, the second seed layer forms a first interface with a magnetic layer;

(c) the magnetic layer; and

(d) a tunnel barrier layer comprised of MgO or another oxide that is formed on the magnetic layer to give a composite seed layer/magnetic layer/tunnel barrier layer configuration.

2. The magnetic element of claim 1 wherein the magnetic layer has a Co_XFe_YNi_ZB_V composition where y>

x+z, v is from about 15 to 40 atomic %, and v+x+y+z=100 atomic %.

3. The magnetic element of claim 1 wherein the magnetic layer has a (A1/A2)_n laminated structure wherein A1 is a first metal or alloy selected from one or more of Co, Ni, and Fe, A2 is a second metal or alloy selected from one or more of Co, Fe, Ni, Ru, Si, V, Rh, Ir, Mg, NiCr, Pt, and Pd, and “

n”

is the number of laminates in the (A1/A2)_n stack.

4. The magnetic element of claim 1 wherein the magnetic layer is an unordered alloy or an ordered L10 alloy with a MT composition wherein M is Rh, Pd, Pt, Ir, or an alloy thereof, and T is Fe, Co, Ni or alloy thereof.

5. The magnetic element of claim 1 wherein the first seed layer has a thickness from about 10 to 100 Angstroms, and the second seed layer has a thickness between about 2 and 20 Angstroms.

6. A magnetic element, comprising:

(a) a seed layer comprising an alloy that is one of TaN, ZrN, or NbN, and one of Mg, MgZr, or MgNb, the seed layer forms a first interface with a magnetic layer; and

(b) the magnetic layer that has a Co_XFe_YNi_ZB_V composition where y>

x+z, v is from about 15 to 40 atomic %, and v+x+y+z=100 atomic %; and

(c) a tunnel barrier layer comprised of MgO or another oxide that induces interfacial perpendicular anisotropy in the magnetic layer at a second interface with the magnetic layer, the aforementioned layers form a seed layer/magnetic layer/tunnel barrier stack.

7. A magnetic element, comprising:

(a) a first seed layer comprising one or more of ZrN, and NbN;

(b) a second seed layer consisting of Ti or Hf that contacts a top surface of the first seed layer, the second seed layer forms a first interface with a magnetic layer;

(c) the magnetic layer; and

(d) a tunnel barrier layer comprised of MgO or another oxide that is formed on the magnetic layer to give a composite seed layer/magnetic layer/tunnel barrier layer configuration.

8. The magnetic element of claim 7 wherein the magnetic layer has a Co_XFe_YNi_ZB_V composition where y>

x+z, v is from about 15 to 40 atomic %, and v+x+y+z=100 atomic %.

9. The magnetic element of claim 7 wherein the magnetic layer has a (A1/A2)_n laminated structure wherein A1 is a first metal or alloy selected from one or more of Co, Ni, and Fe, A2 is a second metal or alloy selected from one or more of Co, Fe, Ni, Ru, Si, V, Rh, Ir, Mg, NiCr, Pt, and Pd, and “

n”

is the number of laminates in the (A1/A2)_n stack.

10. The magnetic element of claim 7 wherein the magnetic layer is an unordered alloy or an ordered L10 alloy with a MT composition wherein M is Rh, Pd, Pt, Ir, or an alloy thereof, and T is Fe, Co, Ni or alloy thereof.

11. The magnetic element of claim 7 wherein the first seed layer has a thickness from about 10 to 100 Angstroms, and the second seed layer has a thickness between about 2 and 20 Angstroms.

12. A magnetic element, comprising:

(a) a seed layer that is an alloy consisting of Sr and one of Ta, Zr, Nb, TaN, ZrN, and NbN, the seed layer forms a first interface with a magnetic layer and enhances perpendicular magnetic anisotropy (PMA) in the magnetic layer; and

(b) the magnetic layer comprising at least one of Fe, Co, or Ni; and

(c) a tunnel barrier layer comprised of MgO or another metal oxide that induces interfacial perpendicular anisotropy in the magnetic layer at a second interface with the magnetic layer, the aforementioned layers form a seed layer/magnetic layer/tunnel barrier stack.

13. A magnetic element, comprising:

(a) a seed layer comprising an alloy that is one of ZrN, or NbN, and one of Ti or Hf, the seed layer forms a first interface with a magnetic layer; and

(b) the magnetic layer that has a Co_XFe_YNi_ZB_V composition where y>

x+z, v is from about 15 to 40 atomic %, and v+x+y+z=100 atomic %; and

(c) a tunnel barrier layer comprised of MgO or another oxide that induces interfacial perpendicular anisotropy in the magnetic layer at a second interface with the magnetic layer, the aforementioned layers form a seed layer/magnetic layer/tunnel barrier stack.