Plasma apparatus and method of fabricating semiconductor device using the same

• US 9,490,107 B2
• Filed: 04/29/2015
• Issued: 11/08/2016
• Est. Priority Date: 05/12/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Moojin, Kim, Bongseong, Koo, DeogJa, Woo, Je-Hun, Lee, Unjoo
• Primary Examiner(s): Owens, Douglas W
• Assistant Examiner(s): Chan, Wei
• Application Number:
  US14/699,266
• Publication Number:
  US 20150325413A1
• Time in Patent Office: 559 Days
• Field of Search: 315/111.21, 156/345.28, 156/345.34, 118/697
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01J 37/32715 Workpiece holder

Abstract

A plasma apparatus includes a process chamber having an inner space, a chuck disposed in the process chamber and having a top surface on which a substrate is loaded, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit generating plasma over the chuck, and a direct current (DC) power generator applying a DC pulse signal to the chuck. A period of the DC pulse signal may include a negative pulse duration during which a negative pulse is applied, a positive pulse duration during which a positive pulse is applied, and a pulse-off duration during which the negative pulse and the positive pulse are turned off. The positive pulse duration is between the negative pulse duration and the pulse-off duration. The pulse-off duration may comprise a voltage having a lower magnitude than the voltage of the positive pulse, such as a ground voltage.

Claims

1. A plasma apparatus comprising:

a process chamber having an inner space;

a chuck disposed in the process chamber, the chuck having a top surface configured to load a substrate;

a gas supply unit supplying a process gas into the process chamber;

a plasma generating unit generating plasma over the chuck; and

a direct current (DC) power generator configured to apply a DC pulse signal having repetitive periods to the chuck, each period of the DC pulse signal comprising a negative pulse duration during which a negative pulse is applied;

a positive pulse duration during which a positive pulse is applied;

a stable duration after the negative pulse duration and before the positive pulse duration; and

a pulse-off duration, after the positive pulse duration and prior to subsequent application of a negative pulse, during which the negative pulse and the positive pulse are turned off, wherein the direct current (DC) power generator is configured to apply the DC pulse signal in a manner such that the pulse-off duration is longer than the stable duration to allow etch by-products, formed during plasma generation, to escape from an etch region of the substrate.

2. The plasma apparatus of claim 1, wherein a voltage value of the stable duration is between voltage values of the negative pulse and the positive pule.

3. The plasma apparatus of claim 2, wherein the direct current (DC) power generator is configured to apply the DC pulse signal a ground voltage to the chuck during the stable duration and the pulse-off duration.

4. The plasma apparatus of claim 1, wherein a magnitude of the positive pulse is less than a magnitude of the negative pulse.

5. The plasma apparatus of claim 1, wherein the negative pulse duration is longer than the positive pulse duration.

6. The plasma apparatus of claim 1, wherein the DC power generator comprises:

a negative power supply generating the negative pulse;

a positive power supply generating the positive pulse; and

one or more switches configured to connect the negative power supply to supply the negative pulse to the chuck and to connect the positive power supply to supply the positive pulse to the chuck.

7. The plasma apparatus of claim 6, wherein the DC power generator further comprises:

a ground source generating a ground voltage;

wherein the one or more switches are configured to connect the ground source to the chuck.

8. The plasma apparatus of claim 7, wherein the pulse modulator comprises:

a first switch having a first terminal connected to the negative power supply;

a second switch having a first terminal connected to the positive power supply;

a third switch having a first terminal connected to the ground source; and

an output terminal connected to second terminals of the first, second and third switches, and

wherein the first, second and third switches operate in response to first, second and third control signals received from a controller.

9. The plasma apparatus of claim 1, further comprising:

an outer ring disposed on an edge of the chuck and surrounding the loaded substrate,

wherein the outer ring is supplied with a second DC pulse signal.

10. The plasma apparatus of claim 9, wherein the second DC pulse signal has the same period as the DC pulse signal applied to the chuck.

11. The plasma apparatus of claim 1, wherein the chuck comprises:

at least one conductive pin disposed within the chuck,

wherein the at least one conductive pin is in contact with the loaded substrate, and

wherein the DC power generator is electrically connected to the at least one conductive pin.

12. A plasma apparatus comprising:

a process chamber having an inner space;

a chuck disposed in the process chamber, the chuck having a top surface configured to load a substrate;

an outer ring disposed at an edge of the chuck, the outer ring configured to surround a loaded substrate;

a gas supply unit supplying a process gas into the process chamber;

a plasma generating unit generating plasma over the chuck; and

a direct current (DC) power generating unit applying a first DC pulse signal to the chuck and a second DC pulse signal to the outer ring,

wherein the first and second DC pulse signals comprise repetitive periods, each period of each of the first and second DC pulse signals comprising;

a negative pulse duration followed by a positive pulse duration followed by a pulse-off duration,

wherein the direct current (DC) power generating unit is configured to control the pulse-off duration of each of the first and second DC pulse signals in a manner such that etch by-products, formed during plasma generation, can escape from an etch region of the substrate and be deposited on an upper surface of the substrate,

wherein the first DC pulse signal and the second DC pulse signal comprise a first negative pulse and a second negative pulse, respectively, during the negative pulse duration,

wherein the first DC pulse signal and the second DC pulse signal comprise a first positive pulse and a second positive pulse, respectively, during the positive pulse duration, respectively, and

wherein the first DC pulse signal and the second DC pulse signal each comprise a ground voltage during off during the pulse-off duration, and

wherein the second DC pulse signal comprises lower potential magnitudes than the first DC pulse signal.

13. A plasma apparatus comprising:

a process chamber configured to maintain a plasma;

a chuck within the process chamber, the chuck comprising a surface configured to mount a wafer;

one or more electrodes configured to generate plasma within the chamber; and

a DC voltage generator configured to repetitively generate a first DC signal and apply the first DC signal to the chuck, the first DC signal consisting of a first portion and a second portion,

wherein the first portion consists of a DC signal that is not greater than −

500V,

wherein the second portion consists of a DC signal that is equal to or greater than about a ground potential,

wherein a duration of the second portion is greater than a duration of the first portion, and

wherein the DC voltage generator is configured to control the duration of the second portion in a manner such that etch by-products, formed during plasma generation, can escape from an etch region of the wafer and be deposited on an upper surface of the wafer.

14. The plasma apparatus of claim 13, wherein the second portion comprises a positive potential pulse portion and a ground potential portion.

15. The plasma apparatus of claim 13, further comprising a ring comprising a conductive material disposed near a top surface of the chuck to surround the surface configured to mount the wafer.

16. The plasma apparatus of claim 15, wherein the first DC signal is applied to the ring.

17. The plasma apparatus of claim 15, wherein the DC voltage generator is configured to repetitively generate a second DC signal and to apply the second DC potential signal to the ring, the second DC signal being generated in synchronism with the first DC signal.

18. The plasma apparatus of claim 17, wherein the second DC signal comprises different potential magnitudes than the first DC signal.

19. The plasma apparatus of claim 18, wherein second DC signal comprises a third portion and a fourth portion,

wherein the third portion consists of a negative pulse, and

wherein the fourth portion consists of a DC signal that is equal to or greater than about a ground potential.

20. The plasma apparatus of claim 17, wherein the first and second DC signals have waveforms that are substantially the same shape but having different magnitudes for at least some portions of the first and second DC signals.

21. The plasma apparatus of claim 19,

wherein the fourth portion comprises a positive potential pulse portion and a ground potential portion, and

wherein the magnitude of the positive potential pulse portion of the fourth portion is different from the magnitude of the positive potential pulse portion of the second portion.

22. The plasma apparatus of claim 21,

wherein the first portion and the third portion are negative pulses having different magnitudes from each other.