Method and structure for FinFET isolation
First Claim
1. A method of forming a semiconductor device, comprising:
- receiving a substrate having an active fin, a plurality of dummy gate stacks over the substrate and engaging the fin, and first dielectric features over the substrate and between the dummy gate stacks;
removing the dummy gate stacks thereby forming a first trench and a second trench, wherein the first and second trenches expose first and second portions of the active fin respectively;
removing the first portion of the active fin; and
forming a gate stack in the second trench, the gate stack engaging the second portion of the active fin.
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Abstract
A semiconductor device with effective FinFET isolation and method of forming the same are disclosed. The method includes receiving a substrate having an active fin, a plurality of dummy gate stacks over the substrate and engaging the fin, and first dielectric features over the substrate and separating the dummy gate stacks. The method further includes removing the dummy gate stacks thereby forming a first trench and a second trench that expose first and second portions of the active fin respectively. The method further includes removing the first portion of the active fin and forming a gate stack in the second trench, the gate stack engaging the second portion of the active fin. The method further includes filling the first trench with a second dielectric material that effectively isolates the second portion of the active fin.
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Citations
20 Claims
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1. A method of forming a semiconductor device, comprising:
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receiving a substrate having an active fin, a plurality of dummy gate stacks over the substrate and engaging the fin, and first dielectric features over the substrate and between the dummy gate stacks; removing the dummy gate stacks thereby forming a first trench and a second trench, wherein the first and second trenches expose first and second portions of the active fin respectively; removing the first portion of the active fin; and forming a gate stack in the second trench, the gate stack engaging the second portion of the active fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a semiconductor device, comprising:
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receiving a substrate having an active fin, an isolation structure over the substrate, a plurality of dummy gate stacks over a first surface of the isolation structure and engaging the fin, spacer features over the first surface and on sidewalls of the dummy gate stacks, and first dielectric features over the first surface and between the spacer features; removing the dummy gate stacks thereby forming first, second, and third trenches, wherein the second trench is between the first and third trenches, and the first, second, and third trenches expose first, second, and third portions of the active fin respectively; removing the second portion of the active fin; and forming gate stacks in the first and third trenches, the gate stacks engaging the first and third portions of the active fin. - View Dependent Claims (12, 13, 14, 15)
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16. A method of forming a semiconductor device, comprising:
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receiving a substrate having first and second active fins, wherein each of the first and second active fins has first and second ends, and the second end of the first active fin is adjacent to the first end of the second active fin; forming a first gate stack over the substrate and engaging the first active fin; forming a second gate stack over the substrate and engaging the second active fin; forming a first isolation structure over the first end of the first active fin from a top view; forming a second isolation structure over the second end of the second active fin from the top view; and forming a third isolation structure adjacent to both the second end of the first active fin and the first end of the second active fin from the top view. - View Dependent Claims (17, 18, 19, 20)
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Specification