Semiconductor device and display device including the semiconductor device

• US 9,490,268 B2
• Filed: 03/21/2016
• Issued: 11/08/2016
• Est. Priority Date: 07/10/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Sato, Takahiro, Jintyou, Masami
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US15/075,765
• Publication Number:
  US 20160225796A1
• Time in Patent Office: 232 Days
• Field of Search: 257/43, 257/53, 257/57, 257/72, 257/88, 257/E27.111, 257/E29.151, 257/E29.296, 349/47, 349/141, 349/147, 349/152, 438/34, 438/104, 438/128, 438/149
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 3/041 Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Claims

1. A display device comprising:

a gate electrode on an insulating surface;

a first wiring on the insulating surface;

a first insulating film over the gate electrode and the first wiring;

a semiconductor layer on the first insulating film, the semiconductor layer comprising a channel formation region over the gate electrode with the first insulating film interposed therebetween;

a source electrode over and in electrical contact with the semiconductor layer;

a drain electrode over and in electrical contact with the semiconductor layer;

a second wiring on the first insulating film;

a second insulating film over the source electrode, the drain electrode and the second wiring; and

a third wiring over the second insulating film,

wherein the third wiring contacts the first wiring through an opening of the first insulating film,

wherein the third wiring contacts the second wiring through an opening of the second insulating film, and

wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode.

2. The display device according to claim 1, wherein the semiconductor layer comprises an oxide semiconductor material.

3. The display device according to claim 1, further comprising a pixel electrode over the second insulating film, the pixel electrode contacting the drain electrode.

4. The display device according to claim 1, wherein the third wiring comprises an oxide, the oxide comprising indium.

5. An electronic device comprising the display device according to claim 1, the electronic device comprising a touch panel adjacent to the display device.

6. A display device comprising:

a first gate electrode on an insulating surface;

a first wiring on the insulating surface;

a first insulating film over the first gate electrode and the first wiring;

a semiconductor layer on the first insulating film, the semiconductor layer comprising a channel formation region over the first gate electrode with the first insulating film interposed therebetween;

a source electrode over and in electrical contact with the semiconductor layer;

a drain electrode over and in electrical contact with the semiconductor layer;

a second wiring on the first insulating film;

a second insulating film over the source electrode, the drain electrode and the second wiring;

a third wiring over the second insulating film; and

a second gate electrode over the second insulating film, the second gate electrode overlapping with the semiconductor layer,

wherein the third wiring contacts the first wiring through an opening of the first insulating film,

wherein the third wiring contacts the second wiring through an opening of the second insulating film, and

wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode.

7. The display device according to claim 6, wherein the semiconductor layer comprises an oxide semiconductor material.

8. The display device according to claim 6, further comprising a pixel electrode over the second insulating film, the pixel electrode contacting the drain electrode.

9. The display device according to claim 6, wherein the third wiring comprises an oxide, the oxide comprising indium.

10. An electronic device comprising the display device according to claim 6, the electronic device comprising a touch panel adjacent to the display device.

11. A display device comprising:

a first gate electrode on an insulating surface;

a first wiring on the insulating surface;

a first insulating film over the first gate electrode and the first wiring;

a semiconductor layer on the first insulating film, the semiconductor layer comprising a channel formation region over the first gate electrode with the first insulating film interposed therebetween;

a source electrode over and in electrical contact with the semiconductor layer;

a drain electrode over and in electrical contact with the semiconductor layer;

a second wiring on the first insulating film;

a second insulating film over the source electrode, the drain electrode and the second wiring;

a third wiring over the second insulating film; and

a second gate electrode over the second insulating film, the second gate electrode overlapping with the semiconductor layer,

wherein the third wiring contacts the first wiring through an opening of the first insulating film,

wherein the third wiring contacts the second wiring through an opening of the second insulating film,

wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode,

wherein the second gate electrode comprises a first region and a second region that face each other in a channel width direction of the semiconductor layer, and

wherein the semiconductor layer is between the first region and the second region of the second gate electrode.

12. The display device according to claim 11, wherein the semiconductor layer comprises an oxide semiconductor material.

13. The display device according to claim 11, further comprising a pixel electrode over the second insulating film, the pixel electrode contacting the drain electrode.

14. The display device according to claim 11, wherein the third wiring comprises an oxide, the oxide comprising indium.

15. An electronic device comprising the display device according to claim 11, the electronic device comprising a touch panel adjacent to the display device.