Solid-state imaging device and manufacturing method thereof, and electronic apparatus
First Claim
Patent Images
1. A manufacturing method of a solid-state imaging device comprising:
- forming a plurality of concave portions in a supporting substrate;
forming a stress film on a first surface of a semiconductor wafer which includes a plurality of solid-state imaging portions;
bonding the first surface of the semiconductor wafer on the supporting substrate so as to seal each concave portion in a view-angle region of each of the solid-state imaging portions, each of the view-angle regions being a region in which a light-receiving pixel of the solid-state imaging device is arranged;
curving the view-angle regions of the plurality of solid-state imaging portions to a concave portions side by stress of the stress film in a state where the semiconductor wafer is thinned; and
dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions.
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Abstract
A solid-state imaging device includes a supporting substrate that includes a concave portion, a solid-state imaging chip that is bonded on the supporting substrate so as to seal the concave portion in a view-angle region, a stress film that is formed on the surface of the solid-state imaging chip, and an imaging surface curved toward the concave portion at least in the view-angle region.
51 Citations
6 Claims
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1. A manufacturing method of a solid-state imaging device comprising:
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forming a plurality of concave portions in a supporting substrate; forming a stress film on a first surface of a semiconductor wafer which includes a plurality of solid-state imaging portions; bonding the first surface of the semiconductor wafer on the supporting substrate so as to seal each concave portion in a view-angle region of each of the solid-state imaging portions, each of the view-angle regions being a region in which a light-receiving pixel of the solid-state imaging device is arranged; curving the view-angle regions of the plurality of solid-state imaging portions to a concave portions side by stress of the stress film in a state where the semiconductor wafer is thinned; and dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions. - View Dependent Claims (2, 3, 4, 5)
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6. A manufacturing method of a solid-state imaging device comprising:
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forming a plurality of concave portions in a supporting substrate; forming a stress film on a first surface of a semiconductor wafer which includes a plurality of solid-state imaging portions, the plurality of solid-state imaging portions of the semiconductor wafer being a frontside-illumination type; bonding a second surface of the semiconductor wafer on the supporting substrate so as to seal each concave portion in a view-angle region of each of the solid-state imaging portions, each of the view-angle regions being a region in which a light-receiving pixel of the solid-state imaging device is arranged; curving the view-angle regions of the plurality of solid-state imaging portions to the concave portions side by stress of the stress film in a state where the semiconductor wafer is thinned; and dividing the semiconductor wafer and the supporting substrate into the plurality of solid-state imaging portions wherein the bonding of the semiconductor wafer is performed in a vacuum chamber, thereafter, a pressure in the chamber is made to be in atmospheric pressure, and the curving of the view-angle regions is performed by both effects of differential pressure between a vacuum and the atmospheric pressure and the stress of the stress film.
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Specification