Structure and formation method of fin-like field effect transistor
First Claim
Patent Images
1. A semiconductor device structure, comprising:
- a semiconductor substrate;
a fin structure over the semiconductor substrate;
a gate stack covering a portion of the fin structure;
an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack; and
a semiconductor protection layer over the epitaxially grown source/drain structure, wherein the semiconductor protection layer has an atomic concentration of germanium greater than that of the epitaxially grown source/drain structure, and the atomic concentration of germanium in the semiconductor protection layer gradually decreases along a direction from a surface of the semiconductor protection layer towards the epitaxially grown source/drain structure.
1 Assignment
0 Petitions
Accused Products
Abstract
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of germanium greater than that of the epitaxially grown source/drain structure.
13 Citations
20 Claims
-
1. A semiconductor device structure, comprising:
-
a semiconductor substrate; a fin structure over the semiconductor substrate; a gate stack covering a portion of the fin structure; an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack; and a semiconductor protection layer over the epitaxially grown source/drain structure, wherein the semiconductor protection layer has an atomic concentration of germanium greater than that of the epitaxially grown source/drain structure, and the atomic concentration of germanium in the semiconductor protection layer gradually decreases along a direction from a surface of the semiconductor protection layer towards the epitaxially grown source/drain structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 18)
-
-
10. A semiconductor device structure, comprising:
-
a semiconductor substrate; a first fin structure over the semiconductor substrate; a first epitaxially grown source/drain structure over the first fin structure; a second fin structure over the semiconductor substrate; a second epitaxially grown source/drain structure over the second fin structure; a first semiconductor protection layer over the first epitaxially grown source/drain structure, wherein the first semiconductor protection layer has an atomic concentration of germanium greater than that of the first epitaxially grown source/drain structure, and the atomic concentration of germanium in the first semiconductor protection layer gradually decreases along a direction from a surface of the first semiconductor protection layer towards the first epitaxially grown source/drain structure; and a second semiconductor protection layer over the second epitaxially grown source/drain structure, wherein the second semiconductor protection layer has an atomic concentration of germanium greater than that of the second epitaxially grown source/drain structure. - View Dependent Claims (11, 12, 13, 19)
-
-
14. A semiconductor device structure, comprising:
-
a semiconductor substrate; a fin structure over the semiconductor substrate; an epitaxially grown source/drain structure over the fin structure; and a semiconductor protection layer over the epitaxially grown source/drain structure, wherein the semiconductor protection layer has an atomic concentration of a semiconductor element greater than that of the epitaxially grown source/drain structure, the atomic concentration of the semiconductor element of the semiconductor protection layer gradually decreases along a direction from a surface of the semiconductor protection layer towards the epitaxially grown source/drain structure, and the semiconductor element is not silicon. - View Dependent Claims (15, 16, 17, 20)
-
Specification